2017
DOI: 10.1016/j.apsusc.2017.07.078
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One-stage pulsed laser deposition of conductive zinc oxysulfide layers

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Cited by 10 publications
(12 citation statements)
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“…The observed effect can be attributed to the evaporation of Se during the deposition process before the nucleation stage, similarly to that reported for sulfur-based ternary Zn(O,S) films grown by PLD. 22 The surface morphology and cross-sectional views of films deposited at substrate temperatures varying from RT to 650 °C are compared in Figure 1. It should be noted that the morphological properties of films fabricated in the temperature region from RT to 400 °C were very similar (see Figure 1, Figure S2 in the SI).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The observed effect can be attributed to the evaporation of Se during the deposition process before the nucleation stage, similarly to that reported for sulfur-based ternary Zn(O,S) films grown by PLD. 22 The surface morphology and cross-sectional views of films deposited at substrate temperatures varying from RT to 650 °C are compared in Figure 1. It should be noted that the morphological properties of films fabricated in the temperature region from RT to 400 °C were very similar (see Figure 1, Figure S2 in the SI).…”
Section: Resultsmentioning
confidence: 99%
“…This phenomenon is similar to that reported for the PLDgrown Zn(O,S) layers in our previous work. 22 For instance, the thicknesses of Zn(O,S) films grown at RT and 400 °C have The atomic percentages for elements and film thickness were determined by averaging the values obtained from three measurements for each sample. been approximately 650 and 580 nm, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…With increasing substrate temperature, the absorption edges shifted to a lower wavelength (blue shift). The optical band gaps of all Zn(O,Se) films were evaluated based on the Tauc relation (2) 7,54 by plotting hv versus (αhv) 2 and extrapolating the linear part of the plot to hv axis (x axis) (see Supplementary Fig. S8).…”
Section: Resultsmentioning
confidence: 99%
“…Film thickness and morphology were characterized by means of high-resolution scanning electron microscope (HR-SEM) Zeiss Merlin equipped with In-Lens SE detector for topographic imaging. Elemental analysis was conducted using Energy Dispersive X-ray (EDX) system (Bruker EDX-XFlash6/30 detector) 7 . XPS measurements were performed with a Kratos Axis Ultra DLD XPS spectrometer with monochromatic Al K α radiation (1486.6 eV).…”
Section: Methodsmentioning
confidence: 99%
“…Thus far, attempts of S‐doping into crystalline ZnO or O‐doping into crystalline ZnS have been made to modify the physical properties of host crystals . Alloy films of ZnO and ZnS have also been used as a buffer layer for solar cells of CuIn 1− x Ga x Se 2− y S y ,19–25 Cu 2 ZnSnS 4 ,26 and SnS because of their controllable band alignment. While these studies reported that ZnO x S y could become amorphous for an intermediate composition range, the electrical transport properties of amorphous ZnO x S y (a‐ZnO x S y ) thin films, including carrier concentration and Hall mobility, have not been studied, except for the resistivity of a film (> 10 2 Ωcm for x = 0.71) .…”
Section: Transport Properties and Chemical Composition Of A Conductivmentioning
confidence: 99%