One step electrodeposition of CuInSe2: Improved structural, electronic, and photovoltaic properties by annealing under high selenium pressure

Guillemoles, Jean‐François; Cowache, P.; Lusson, A.; Fezzaa, Kamel; Boisivon, Frederic; Vedel, J.; Lincot, Daniel

doi:10.1063/1.361446

Cited by 123 publications

(71 citation statements)

References 33 publications

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“…At this temperature it takes around 40 minutes to achieve 21 at.% Cu content in a 2 micron thick layer, as measured by EDX after annealing. The precursor layers were annealed in a two temperaturezone quartz tube furnace under flowing N 2 , similar furnaces with both open and closed designs have been reported by previous authors [10,11]. Se was supplied from a removable quartz crucible that was heated separately from the substrates to allow control of the Se supply during annealing.…”

Section: Methodsmentioning

confidence: 99%

Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

et al. 2009

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Section: Methodsmentioning

confidence: 99%

Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

et al. 2009

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“…However, this phenomenon can be improved through annealing. 10,[19][20][21] When the temperature was increased to 550…”

Section: Resultsmentioning

confidence: 99%

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Cheng

Wang

Tsai

et al. 2017

ECS J. Solid State Sci. Technol.

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CuInSe 2 nanowire (NW) arrays were prepared in a heated electrolyte (45 • C) through anodized aluminum oxide template-assisted pulse electrodeposition. After the CuInSe 2 NWs were as-grown, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) revealed the recrystallization status of the CuInSe 2 NWs annealed at temperatures ranging from 250 • C to 550 • C. The results indicated that the NWs underwent a phase transformation from the (204/220) plane to the (112) plane. Additionally, the material particle size and quantum dots were measured using HRTEM and ultraviolet/visible spectroscopy. The particle size of the as-grown CuInSe 2 NWs ranged from 3.8 to 8 nm. The as-grown CuInSe 2 NWs exhibited a blue-shift in the material absorption band at 1100 and 1200 nm compared with those annealed at 550 • C. The results of scanning electron microscopy had a diameter and length of 80 nm and 2.2 μm, respectively. Mott-Schottky and ohmic contact plots revealed that the CuInSe 2 NWs were p-type semiconductors. Moreover, the different leakage current mechanisms of the nonideal Schottky diode were studied. Finally, near-ideal Schottky barrier diodes were obtained at an annealing temperature of 550 • C, and their work function was estimated to be in the range of 5.04-5. Copper indium selenide (CuInSe 2 ) is commonly used in photovoltaic applications because of its excellent properties, including the presence of a direct bandgap, a high absorption coefficient (> 10 5 cm −1 ), and high thermal and electrical stabilities. 1 According to the literature, thin-film CuInSe 2 solar cells fabricated through electrodeposition exhibit a conversion efficiency of approximately 8.7%, 2 and quaternary compound (CuIn 1-x Ga x Se 2 ) devices exhibit a conversion efficiency of 15.4%.3 However, the minority carrier lifetime of the thin-film structure is short because minority carriers have the longest mobility path (depending on material thickness). Onedimensional (1D) semiconductor nanostructures such as nanorods, nanowires (NWs), and nanotubes have been extensively investigated. These nanostructures show great promise to replace traditional thinfilm structures in optoelectronic and photovoltaic devices because of their unique optical and electronic properties, and because the geometry of 1D nanostructures can influence device performance.4-9 The 1D nanostructure can provide light absorption and a short carrier mobility path (radius of the NW) for minority carrier extraction efficiency. On the other hand, 1D nanostructure carrier lifetimes can be extended by improving scattering mechanisms and lattice vibration. The carrier mobility depends on the grain boundary, and this phenomenon implies that energy loss and the transfer of heat energy inside the material causes lattice vibration. It's worth mentioning, single-phase nanostructure can be easily achieved by control growth mechanisms and annealed through anodized aluminum oxide (AAO) templateassisted pulse electrodeposition. 10,11 Moreover, in the ternary...

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“…Pern et al Guillemoles et al [74][75][76] investigated the annealing treatments of electrodeposited CuInSe 2 films in a selenium atmosphere. Annealing treatments under Se pressure transformed these precursor films into largegrain CuInSe 2 films that had improved electronic properties.…”

Section: )mentioning

confidence: 99%

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

Chung¹,

Lee²

2012

Journal of Electrochemical Science and Technology

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:Although indium (In) is not an abundant element, the use of indium is expected to grow, especially as applied to copper-indium-(gallium)-selenide (CI(G)S) solar cells. In future when CIGS solar cells will be used extensively, the available amount of indium could be a limiting factor, unless a synthetic technique of efficiently utilizing the element is developed. Current vacuum techniques inherently produce a significant loss of In during the synthetic process, while electrodeposition exploits nearly 100% of the In, with little loss of the material. Thus, an electrochemical process will be the method of choice to produce alloys of In once the proper conditions are designed. In this review, we examine the electrochemical processes of electrodeposition in the synthesis of indium alloys. We focus on the conditions under which alloys are electrodeposited and on the factors that can affect the composition or properties of alloys. The knowledge is to facilitate the development of electrochemical means of efficiently using this relatively rare element to synthesize valuable materials, for applications such as solar cells and light-emitting devices.

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One step electrodeposition of CuInSe2: Improved structural, electronic, and photovoltaic properties by annealing under high selenium pressure

Cited by 123 publications

References 33 publications

Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

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One step electrodeposition of CuInSe2: Improved structural, electronic, and photovoltaic properties by annealing under high selenium pressure

Cited by 123 publications

References 33 publications

Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

Characteristics of Quantum Dots and Single-Phase p-CuInSe2Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

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Product

Resources

About

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact