One-step method to simultaneously synthesize separable Te and GeTe nanosheets

Yao, Yuyu; Zhan, Xueying; Ding, Chuyun; Wang, Rui; Wang, Yanrong; Yang, Jia; Wang, Zhenxing; He, Jun

doi:10.1007/s12274-022-4330-6

Cited by 8 publications

(5 citation statements)

References 43 publications

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“…[30][31][32][33] However, owing to the ultralow formation energy of Ge vacancies, the ultrahigh hole concentration (10 21 cm -3 ) in conventional GeTe crystal induces metallic conduction and inhibits its semiconductor properties. [34][35][36][37][38][39][40] Element doping is an effective strategy for suppressing Ge vacancies and adjusting the carrier concentration of GeTe. For example, GeTe has been successfully doped with antimony (Sb) and bismuth (Bi) donor dopants to reduce the number of Ge vacancies.…”

Section: Introductionmentioning

confidence: 99%

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Qu,

Cheng,

Lan

et al. 2024

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As p‐type phase‐change degenerate semiconductors, crystalline and amorphous germanium telluride (GeTe) exhibit metallic and semiconducting properties, respectively. However, the massive structural defects and strong interface scattering in amorphous GeTe films significantly reduce their performance. In this work, two‐dimensional (2D) p‐type GeTe nanosheets are synthesized via a specially designed space‐confined chemical vapor deposition (CVD) method, with the thickness of the GeTe nanosheets reduced to 1.9 nm. The space‐confined CVD method improves the crystallinity of ultrathin GeTe by lowering the partial pressure of the reactant gas, resulting in GeTe nanosheets with excellent p‐type semiconductor properties, such as a satisfactory on/off ratio of 105. Temperature‐dependent electrical measurements demonstrate that variable‐range hopping and optical‐phonon‐assisted hopping mechanisms dominate transport behavior at low and high temperatures, respectively. GeTe devices exhibit significantly high responsivity (6589 and 2.2 A W−1 at 633 and 980 nm, respectively) and detectivity (1.67 × 1011 and 1.3 × 108 Jones at 633 and 980 nm, respectively), making them feasible for broadband photodetectors in the visible to near‐infrared range. Furthermore, the fabricated GeTe/WS2 diode exhibits a rectification ratio of 103 at zero gate voltage. These satisfactory p‐type semiconductor properties demonstrate that ultrathin GeTe exhibits enormous potential for applications in optoelectronic interconnection circuits.

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Section: Introductionmentioning

confidence: 99%

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Qu,

Cheng,

Lan

et al. 2024

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“…27 Additionally, on account of the restricted dangling bonds on the surface, GeTe theoretically exhibits the high stability in applications. 28 Till now, only a few researches about the GeTe-based photodetectors have been presented. Zhao et al…”

Section: ■ Introductionmentioning

confidence: 99%

“…Moreover, the component elements of GeTe are relatively environment-friendly and earth-abundant in nature . Additionally, on account of the restricted dangling bonds on the surface, GeTe theoretically exhibits the high stability in applications . Till now, only a few researches about the GeTe-based photodetectors have been presented.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Photodetector Based on Germanium Telluride Film Synthesized by Physical Vapor Deposition

Wang,

Lu,

Dong

et al. 2024

ACS Appl. Nano Mater.

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Benefiting from the attractive high carrier mobility, large absorption coefficient, and ambient stability, group IV−VI compounds show excellent potential applications for optoelectronic devices. Herein, a germanium telluride (GeTe) film with a nanosphere structure has been controllably grown by facile physical vapor deposition and utilized into a photoelectrochemical (PEC)-type photodetector. The GeTe-based PEC-type photodetector possesses an excellent photoresponse and high responsivity in the visible region. Meanwhile, density functional theory calculations were employed to investigate the electronic characteristics of GeTe, supplying evidence of the broadband absorption. The improvement of photoelectric response can be attributed to the thicker films due to the larger light harvesting and higher carrier concentration, which is also verified by the visible− near-infrared absorption spectra and electrochemical impedance spectroscopy. The photocurrent density (I ph ) and photoresponsivity (R ph ) values of the GeTe-based photodetector can reach 22.8 μA/cm 2 and 228.9 μA/W. Generally, our work provides an effective way to extend semiconductor materials in applications of PEC-type photodetectors.

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“…[31] Yao et al reported a one-step CVD method to simultaneously grow GeTe and Te nanoplates and the investigation of their electrical properties. [32] Luo et al prepared a series of codoped Ge 1−2x Te(CuSb) x (x = 0.025, 0.05, 0.075, 0.10) compounds through the traditional solid reaction. [33] Saj et al demonstrated the deposition of a size-controlled GeTe nanowire via direct-current magnetron sputtering and inert gas condensation techniques.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of 2D α‐GeTe Single Crystals and α‐GeTe/WSe₂ Heterostructures with Enhanced Electronic Performance

et al. 2022

Adv Funct Materials

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Two-dimensional (2D) materials have attracted extensive attention due to their important prospects in electronics and optoelectronics. Synthesizing new 2D materials, characterizing their properties, and developing their applications are still important topics. Herein, the synthesis of α-GeTe nanoplates on different substrates via the chemical vapor deposition process and the systematical investigation of their structure and electrical properties, is reported. By controlling the synthesis temperature and carrier gas, α-GeTe nanoplates, with a lateral dimension up to 30 µm and a thickness down to 1.2 nm, which corresponds to the thickness of one unit cell, can be obtained on 2D WSe 2 substrate. Electrical transport studies show 2D α-GeTe nanoplates have an excellent conductivity (9.33 × 10 5 S m −1 ) and an extraordinary breakdown current density (6.1× 10 7 A cm −2 ). Compared with traditional WSe 2 transistors with deposited metal electrodes, the WSe 2 transistors with the metallic α-GeTe nanoplates as van der Waals metal electrodes achieved much better performance, such as higher on-state current (from 7.83 to 23.23 µA µm −1 ) and electron mobility (from 16.5 to 75.0 cm 2 V 1 S 1 ). This study demonstrates an effective pathway to achieve ultrathin 2D materials and provides an accessible strategy to improve the performance of 2D electronic devices.

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One-step method to simultaneously synthesize separable Te and GeTe nanosheets

Cited by 8 publications

References 43 publications

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Photoelectrochemical Photodetector Based on Germanium Telluride Film Synthesized by Physical Vapor Deposition

Synthesis of 2D α‐GeTe Single Crystals and α‐GeTe/WSe₂ Heterostructures with Enhanced Electronic Performance

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One-step method to simultaneously synthesize separable Te and GeTe nanosheets

Cited by 8 publications

References 43 publications

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Space‐Confined Growth of Ultrathin P‐Type GeTe Nanosheets for Broadband Photodetectors

Photoelectrochemical Photodetector Based on Germanium Telluride Film Synthesized by Physical Vapor Deposition

Synthesis of 2D α‐GeTe Single Crystals and α‐GeTe/WSe2 Heterostructures with Enhanced Electronic Performance

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Synthesis of 2D α‐GeTe Single Crystals and α‐GeTe/WSe₂ Heterostructures with Enhanced Electronic Performance