One-step preparation of graphene oxide–poly(3,4 ethylenedioxythiophene) composite films for nonvolatile rewritable memory devices

Li, Yongming; Ni, Xiuyuan

doi:10.1039/c5ra25517a

Cited by 21 publications

(7 citation statements)

References 44 publications

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“…The bandgap of GO was known to be variable and affected by a number of factors 54 , 55 . In order to determine the lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) energy levels of GO in our device, the UV-vis absorption spectrum and cyclic voltammetry ( C - V ) sweeps for GO film were measured.…”

Section: Resultsmentioning

confidence: 99%

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Sun

Wen

Bai

et al. 2017

Sci Rep

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Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited current tri-stability with three conductivity states, which clearly revealed ternary memory performance. Under the stimulus of the external voltage, a stable intermediate conductivity state was observed. In the write-read-erase-read test, the ITO/PS+GO/Al device exhibited rewritable, nonvolatile, ternary memory properties. The resistance as functions of the time indicated that three conductivity states held for 2 × 105 s, suggesting that the good stability of the ITO/PS+GO/Al devices. HRTEM and XPS observation indicated that the Al top electrode reacted with oxygen within in GO.

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Section: Resultsmentioning

confidence: 99%

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Sun

Wen

Bai

et al. 2017

Sci Rep

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“…Typically, natural DNA has the Highest Occupied Molecular Orbital (HOMO) and Lowest Unoccupied Molecular Orbital (LUMO) energy levels with around −5.30 and −1.08 eV, respectively . The PEDOT: PSS electrode has a similar HOMO level (−5.2 eV) to that of the DNA, which leads to a lower energy barrier for hole injection. In contrast, the probability of electron injection from the electrode is lower due to the higher energy gap between the LUMO level of the DNA and that of PEDOT:PSS (−3.2 eV).…”

Section: Resultsmentioning

confidence: 99%

A Robust, Air‐Stable and Recyclable Hydrogel Toward Stretchable Electronic Device Applications

Hsu

Huang

et al. 2018

Macro Materials & Eng

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A novel hygroscopic hydrogel with air‐stable, recyclable, and stretchable properties is demonstrated in this study. The hydrogel is prepared by the simple polymer blends of two hydrophilic polymers, poly(vinyl alcohol) (PVA) and poly(methacrylic acid) (PMAA), using ethylene glycol as a hygroscopic solvent and cross‐linker. The PVA/PMAA hydrogel is highly stretchable after absorbing water molecules from the ambient environment as plasticizers. The hydrogel shows a high mechanical strength with a Young’s modulus of 0.75 MPa, linear region of 42%, and elongation of over 550% at break, and could be hydrolyzed by water then recast for high quality film for many times. The unique advantages of this hydrogel is further demonstrated by fabricating a stretchable organic memory device using the deoxyribonucleic acid as the memory layer on top of the hydrogel substrate. The device exhibits a write‐once‐read‐many‐times type behavior with a memory ratio of 104, retention time over 105 s, and mechanical durability over 30% strain.

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“…In order to further insight into the current conduction mechanism of the fabricated Al/TPA-Cz PI/ITO device, the negative part of the switching curve in triplet state was analyzed by logarithmic coordinates as shown in Figure 7(a), according to reported in the literature. 3,29 –32 For the memory device of TPA-Cz PI, according to the linear fitting, it was found that the I-V relationship in the ON2 state showed an Ohmic conduction behavior with a slope of 1.0 and the linearity degree of 1.00, which was considered to be the formation of conductive filament, during the region of approximately –3.0 to –0.06 V, as shown in Figure 7(b), following the Ohmic conduction model 3 …”

Section: Resultsmentioning

confidence: 99%

Ternary memory property of novel polyimide with backbone carbazole moiety and pendant triphenylamine moiety

Yang

Jin

Liu

et al. 2018

High Performance Polymers

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The polyimide (TPA-Cz PI) was synthesized by the reaction of 9-(4′-(4′-diphenylamino)phenylbenzyl)-3,6-diaminocarbazole with 2,2′,3,3′-biphenyltetracarboxylic dianhydride through a classical two-step polymerization process. It exhibited excellent organo-solubility and self-extinguishing property. The synthesized TPA-Cz PI shown excellent film formation. The TPA-Cz PI film sandwiched between an indium tin oxide bottom electrode and Al top electrode. And the fabricated memory device exhibited ternary rewritable storage property in the bias with good data retention and the current ratio of 104:102:1 for ON2, ON1, and OFF states. Its current conduction mechanism by the I-V curves of different conduction models based on the experimental data was analyzed and used to illuminate the physical nature of resistance switching effects. The experimental result indicates that field-induced conformational ordering of the TPA-Cz PI chains and charge-transfer interaction between electron-donor and electron-withdrawing are responsible for the switching behavior. This work can provide a sketch for the design and selection of ternary state resistance random access memory materials in future research.

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One-step preparation of graphene oxide–poly(3,4 ethylenedioxythiophene) composite films for nonvolatile rewritable memory devices

Abstract: A nonvolatile rewritable memory composite film consisting of PEDOT and GO has been prepared by using GO-initiated photopolymerization.

Cited by 21 publications

References 44 publications

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

A Robust, Air‐Stable and Recyclable Hydrogel Toward Stretchable Electronic Device Applications

Ternary memory property of novel polyimide with backbone carbazole moiety and pendant triphenylamine moiety

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