Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Abstract

Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited current tri-stability with three conductivity states, which clearly revealed ternary memory performance. Under the stimulus of the external voltage, a stable intermediate conductivity state was observed. In the write-read-erase-read test, the ITO/PS+GO/Al device exhibited rewritable, nonvolatile, ternary memory properties. The resistance as functions of the time indicated that three conductivity states held for 2 × 105 s, suggesting that the good stability of the ITO/PS+GO/Al devices. HRTEM and XPS observation indicated that the Al top electrode reacted with oxygen within in GO.

Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device

“…In the OFF state of the FTO/PMMA/Ag and FTO/PMMA+oxadiazole/Ag device, the ohmic conduction was observed in a low voltage region, and the slope increased to over 2 (2.94, 1.19, and 3.78), manifesting that the space-charge-limited conduction (SCLC) among the disconnected portion of the conducting filament governs in a high voltage region. These conduction properties in ON and OFF states are also in keeping with those in the previous report [40][41][42].…”

Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

“…Typical of organic materials is the degradation of their properties with time; that is why with the passage to the inorganic materials for flexible and printed electronics a certain breakthrough in the quality of fabricated structures is expected to be achieved. GO is the most studied graphene derivative used as a material for the development of resistive memory cells . Structures based on GO exhibit a resistive switching effect; they possess flexibility; and they are transparent, easy in fabrication, and inexpensive.…”

Recent advances in organic‐based materials for resistive memory applications

“…Through amido bonding, a TPAPAM‐GO composite was formed, which was then integrated into a memory device of ITO/TPAPAM‐GO/Al (Figure 19A). The resultant device exhibited prominent rewritable binary memory behavior with a low operational voltage of −1.0 V (Figure 19B), a high ON/OFF current ratio above 10 3 , a long retention time of 3 hours (Figure 19C), and read cycles up to 10 8 under a constant voltage bias of −1.0 V. In light of this study, the subsequent research witnessed a variety of polymer‐GO composites for memory storage, such as PI, 159 P3HT, 160 and polystyrene (PS), 161 which could even actuate multilevel resistive switching for high storage capacity. In addition to polymers, composites of GO/rGO sheets with organic small molecules or inorganic compounds (eg, Au NPs and MoS 2 ) were also developed for resistive memory devices 162‐169 .…”

“…Since its discovery, graphene has undergone a rapid development and shown broad prospects in a variety of fields including batteries, sensors, field‐effect transistors, and optoelectronic devices 142‐150 . Notably, graphene‐based materials have also demonstrated as promising alternatives for resistive memory applications, thanks to its easy solution‐processing features, outstanding physical and chemical adjustability, 3D stacking capability, and possibility of obtaining heterostructures 51,151‐167 . The most common solution‐processing forms of graphene‐based derivatives for resistive memory are GO and rGO 51,154,156 .…”