Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device

Abstract

Electrical characterization indicates that the nonvolatile write once read many (WORM) times/volatile static random access memory (SRAM) conversion was triggered by the composite of the oxadiazole small molecule. FTO/PMMA/Ag device possesses nonvolatile WORM memory behavior, while the FTO/PMMA+oxadiazole/Ag device shows vastly different volatile SRAM feature. The FTO/PMMA/Ag and FTO/PMMA+oxadiazole/Ag memory devices both exhibit high ON/OFF ratio nearly 104. The additive oxadiazole small molecule in the polymethyl methacrylate was suggested to form an internal electrode and serve as a channel during the charge transfer process, which is easy to both the charge transfer and back charge transfer, as a consequence, the WORM/SRAM conversion upon oxadiazole small molecule complexation was triggered. The results observed in this work manifest the significance of oxadiazole small molecule to the memory effects and will arouse the research interest about small molecule composite applied in memory devices.

A Flexible Memristor Model With Electronic Resistive Switching Memory Behavior and Its Application in Spiking Neural Network

“…The detailed electrical analysis indicated that the ERSM behavior could be attributed to the electronic switching mechanism mediated by the electron trapping/detrapping [9]. A polymer memristor with buffer layer was prepared in [10], and its specific working mechanism indicated that the device also belonged to ERSM. In [11], the design and fabrication of an asymmetrical Al/TiO2/FTO sandwiched nanostructure was reported by using simple spin-coating and vacuum deposition techniques.…”