One-step synthesized PbSe nanocrystal inks decorated 2D MoS₂ heterostructure for high stability photodetectors with photoresponse extending to near-infrared region

Abstract

Two-dimensional layered transition metal dichalcogenides (TMDs) have been widely employed as functional materials in promising electronics and optoelectronic devices due to their unique physical and outstanding electronic properties. However, 2D...

A high-performance UV photodetector with superior responsivity enabled by a synergistic photo/thermal enhancement of localized surface plasmon resonance

“…38 Meanwhile, the exponent value of the W 18 O 49 /TiO 2 heterostructure (0.77 close to 1) suggests less trap states compared to a purely TiO 2 photodetector ( θ = 0.66), 39,40 which can be related to the plasmonic heterostructure efficiently collecting photoinduced charge carriers in the space charge region. 41,42…”

“…38 Meanwhile, the exponent value of the W 18 O 49 /TiO 2 heterostructure (0.77 close to 1) suggests less trap states compared to a purely TiO 2 photodetector (y = 0.66), 39,40 which can be related to the plasmonic heterostructure efficiently collecting photoinduced charge carriers in the space charge region. 41,42 We now carry out a representative optoelectronic performance comparison between a pristine TiO 2 photodetector and a W 18 O 49 /TiO 2 photodetector under UV light illumination with a 1 V bias. The responsivity (R), external quantum efficiency (EQE) and detectivity (D*) are three key parameters to evaluate the optoelectronic performance of the photodetector.…”

Emerging trends in van der Waals 2D TMD heterojunction bipolar transistors

“…layered materials have recently gained attention due to their exceptional electronic, optoelectronic, and semiconducting properties. [17][18][19][20][21][22][23][24][25] 2D TMD heterostructures have a weak interlayer bond, a quantum effect, and tunneling, so they have attracted a large amount of research attention. [26][27][28][29][30][31] These three characteristics set them apart from the traditional 3D bulk materials, which are causing increased interest in them.…”

Recent Progress of Flexible Photodetectors Based on Low‐Dimensional II–VI Semiconductors and Their Application in Wearable Electronics

“…However, this strategy will inevitably lead to inconsistent ligand exchange and surface damages during the repeated cycles of surface ligands exchange steps by using organic polar solvent, which will also deteriorate the optoelectronic performance of the QDs based photodetectors. [76,77] Up to now, an optimized ligands exchange method has been explored to minimize the surface damage by directly synthesize semiconductor PbX (X = S and Se) QDsinks at room temperature, [78,79] but it has not been dem onstrated in II-VI semiconductor QDs system. We deem that this strategy may provide a better alternative for the synthesis of II-VI semiconductors QDs in future research.…”