One-transistor-cell multiple-valued CAM for a collision detection VLSI processor

Hanyu, Takahiro; Kanagawa, Naoki; Kameyama, Michitaka

doi:10.1109/isscc.1996.488616

Cited by 8 publications

(2 citation statements)

References 2 publications

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“…Our proposed design is significantly superior to CAM cell designs based on single flash memory transistors,. [16][17][18] First, the flash memory-based CAM design is a serial design, as the match or mismatch operation is performed bit-by-bit. To search a CAM word with N cells, it would require 2 N cycles without pipelining or N þ 1 cycles with pipelining, which significantly degrades the search speed of CAMs.…”

Section: Introductionmentioning

confidence: 99%

An Ultracompact Single‐Ferroelectric Field‐Effect Transistor Binary and Multibit Associative Search Engine

Yin

Müller

Huang

et al. 2023

Advanced Intelligent Systems

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Content addressable memory (CAM) is widely used in associative search tasks due to its parallel pattern matching capability. As more complex and data‐intensive tasks emerge, it is becoming increasingly important to enhance CAM density for improved performance and better area efficiency. To reduce the area overheads, various nonvolatile memory (NVM) devices, such as ferroelectric field‐effect transistors (FeFETs), are used in CAM design. Herein, a novel ultracompact 1FeFET CAM design that enables parallel associative search and in‐memory hamming distance calculation is used, as well as a multibit CAM for exact search using the same CAM cell. The proposed CAM design leverages the 1FeFET1R structure, and compact device designs that integrate the series resistor current limiter into the intrinsic FeFET structure are demonstrated to turn the 1FeFET1R structure into an effective 1FeFET cell. A two‐step search operation of the proposed binary and multibit 1FeFET CAM array through both experiments and simulations is proposed, showing a sufficient sensing margin despite unoptimized FeFET device variation. In genome pattern matching applications, using the hyperdimensional computing paradigm, the design results in a 89.9× speedup and 66.5× improvement in energy efficiency over the state‐of‐the‐art alignment tools on GPU.

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Section: Introductionmentioning

confidence: 99%

An Ultracompact Single‐Ferroelectric Field‐Effect Transistor Binary and Multibit Associative Search Engine

Yin

Müller

Huang

et al. 2023

Advanced Intelligent Systems

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“…Publisher Item Identifier S 0018-9200(96)07589-0. Our design also stands in contrast to the CAM cell array using floating gate transistors described by T. Hanyu et al in [6] and [7]. While LSI's based on such multivalued arrays have the great advantage of higher density, they would be hard to implement: the complicated multivalued logic they require would mean that their active operational margins would be smaller than normal binary flash memories and insufficient for stable operations.…”

Section: Introductionmentioning

confidence: 99%

A 1-Mb 2-Tr/b nonvolatile CAM based on flash memory technologies

Miwa

Yamada

Hirota

et al. 1996

IEEE J. Solid-State Circuits

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This paper describes the circuit technologies and the experimental results for a 1 Mb flash CAM, a content addressable memory LSI based on flash memory technologies. Each memory cell in the flash CAM consists of a pair of flash memory cell transistors. Additionally, four new circuit technologies have been developed: a small-size search sense amplifier; a highly parallel search management circuit; a high-speed priority encoder; and word line/bit line redundancy circuits for higher production yields. A cell size of 10.34 m 2 and a die size of 42.9 mm 2 have been achieved with 0.8 m design rules. Read access time and search access time are 115 ns and 145 ns, respectively, with a 5 V supply voltage. Power dissipation in 3.3 MHz operations is 210 mW in read and 140 mW in search access.

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