Open circuit voltage decay lifetime of ion irradiated devices

Vobecký, J.; Hazdra, P.; Záhlava, V.

doi:10.1016/s0026-2692(98)00173-6

Cited by 25 publications

(9 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We used the OCVD technique for recording the open circuit voltage decay and to calculate high-level carrier lifetime, according to method described in the ref. [11]. To achieve a steady-state excess carrier concentration during the OCVD measurement, the forward current applied to the diodes was 45 A/cm 2 .…”

Section: Methodsmentioning

confidence: 99%

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

Komarnitskyy¹,

Hazdra²

2009

ECS Trans.

View full text Add to dashboard Cite

The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with oxygen concentration changing from 2x10^16 cm-3 to 1.4x10^18 cm-3. Implantation was performed with 700 keV and 1.8 MeV protons to fluence ranging from 1x10^10 to 1x10^15 cm-2. Results of C-V measurement showed that proton implantation introduces a Gaussian like distribution of shallow hydrogen donors that corresponds to the profile of implanted hydrogen obtained from the secondary ion mass spectroscopy measurement. Subsequent isochronal annealing leads to annealing out of hydrogen donors (~250{degree sign}C) and formation of a series of hydrogen thermal donors (250-350{degree sign}C). In substrates with enhanced concentration of oxygen, the radiation enhanced thermal donors and ordinary thermal donors (>400{degree sign}C) were registered. It was shown that the introduction rate of hydrogen and thermal hydrogen donor layers is enhanced in materials with higher oxygen concentration. However, low oxygen concentration is preferred when better control over spatial distribution of the excess donor profiles is required.

show abstract

Section: Methodsmentioning

confidence: 99%

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

Komarnitskyy¹,

Hazdra²

2009

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…Lifetime reduction involves the addition of deep level impurities or creation of lattice damages by radiation in a predetermined controlled manner [119][120][121][122][123][124][125][126][127][128][129][130][131][132][133][134][135][136]. Deep level impurities that have been used for this purpose are gold [119] and platinum [120] while radiations employed are electron beams [121][122][123][124], [133], gamma rays [121], proton and alpha-particle beams [125][126][127][128][129], [133].…”

Section: Techniques Of Lifetime Reductionmentioning

confidence: 99%

“…Deep level impurities that have been used for this purpose are gold [119] and platinum [120] while radiations employed are electron beams [121][122][123][124], [133], gamma rays [121], proton and alpha-particle beams [125][126][127][128][129], [133]. The penetrating range of the radiation is inversely proportional to the mass of the particle.…”

Section: Techniques Of Lifetime Reductionmentioning

confidence: 99%

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Khanna

2005

Progress in Quantum Electronics

View full text Add to dashboard Cite

“…Electrical characteristics (both static and dynamic) were measured after irradiation and compared with those obtained on pristine devices. Radiation damage was characterised by capacitance to voltage ( C–V ) measurement, deep level transient spectroscopy (DLTS) and open‐circuit voltage decay (OCVD) measurement [29].…”

Section: Resultsmentioning

confidence: 99%

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Hazdra

Popelka

2019

IET Power Electronics

View full text Add to dashboard Cite

A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal-oxide-semiconductor field-effect transistors. According to the authors' study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.

show abstract

Open circuit voltage decay lifetime of ion irradiated devices

Cited by 25 publications

References 9 publications

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Contact Info

Product

Resources

About