Operating modes of millimetre wave transferred electron oscillators

Eddison, I.G.; Brookbanks, D.M.

doi:10.1049/el:19810080

Cited by 31 publications

(2 citation statements)

References 2 publications

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“…These devices are believed to operate in the fundamental mode since the measured Q values were between 30 and 100 around 120 GHz using a self-injection locking method. These Q values are not a characteristic of a harmonic mode operation [27,28]. Even though these results are preliminary, they represent the best performance from Gunn Devices reported at these frequencies.…”

Section: Graded Doping Profilementioning

confidence: 84%

D-band (110–170 GHz) InP gunn devices

Kamoua

Eisele

Haddad

1993

Solid-State Electronics

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This paper reports on the development of InP Gunn sources for operation in the D-band (li0-170GHz). n+-n-n + structures with flat doping as well as graded doping profiles have been considered. Oscillations were obtained at 108.3 GHz from a 1 #m structure with a uniform n doping of 2.5 x 1016cm-3. The CW RF output power was 33 roW. A 1 #m graded structure with an n doping increasing linearly from 7.5 x 10 ~5 to 2.0 x 10~6cm-3 has resulted in 20roW at 120GHz and 10roW at 136 GHz. These results are believed to correspond to a fundamental mode operation and represent the state-of-the-art performance from InP Gunn devices at these frequencies. This improvement in performance is attributed in part to a processing technique based on the use of etch-stop layers and lnGaAs cap layers. An etch-stop layer allows low-profile mesas (2-3/~m) and InGaAs cap layers help reduce the contact resistance, thus minimizing series resistances in the device. In addition, a physical model based on the Monte Carlo method was developed to aid in the design of structures for high frequency operation. Experimental results obtained from a 1.7#m Gunn device operating at W-band frequencies were used to estimate appropriate InP material parameters.

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Section: Graded Doping Profilementioning

confidence: 84%

D-band (110–170 GHz) InP gunn devices

Kamoua

Eisele

Haddad

1993

Solid-State Electronics

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“…Useful RF output power from GaAs Gunn diodes has been obtained at 95 GHz [17]. Many GaAs Gunn harmonic oscillators have been achieved in the W-band and the harmonic operation of Gunn diode has been discussed in detail [18][19][20]. The strong nonlinearity in the GaAs Gunn diodes can be used for internal frequency multiplication in the devices thus generating output power at harmonic frequencies.…”

Section: The Harmonic Operation Of Gaas Gunn Oscillatormentioning

confidence: 99%

A Novel SIW-Based Planar W-Band GaAs Gunn Harmonic Oscillator

Liu

Tang

Cao

2010

J Infrared Milli Terahz Waves

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Based on the substrate integrated waveguide (SIW) technology, a novel W-band low phase noise GaAs Gunn planar harmonic oscillator is developed in this paper. The technique of harmonic extraction from Gunn diodes and SIW resonant cavity structures are discussed in detail. Due to the high quality factor and planar structure of the SIW cavity resonator, the oscillator is characterized by some advantages such as low phase noise, small size, low cost and planar integration. The measured phase noise is −108.56 dBc/Hz at 1 MHz offset and the output power is more than 9 dBm at 94.78 GHz. A 300 MHz of linear tuning range with power fluctuation less than 1.5 dB is observed when the Gunn diode is biased from 4 to 5.3 V.

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Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency content

Jones

Tait

Shur

1992

Micro & Optical Tech Letters

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We report large increases in the harmonic components of the oscillation current waveforms for InP and GaAs TEDs by appropriate modulation of the device doping profile. The results are based on accurate drift‐diffusion simulations of Gunn‐diode structures. An unoptimized InP modulated‐impurity‐concentration transferred‐electron device demonstrated a 100% increase in second‐harmonic power generation as compared with its companion TED. © 1992 John Wiley & Sons, Inc.

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Operating modes of millimetre wave transferred electron oscillators

Cited by 31 publications

References 2 publications

D-band (110–170 GHz) InP gunn devices

D-band (110–170 GHz) InP gunn devices

A Novel SIW-Based Planar W-Band GaAs Gunn Harmonic Oscillator

Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency content

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