Operation of an optoelectronic crossbar switch containing a terabit-per-second free-space optical interconnect

Walker, Andrew; Fancey, S.J.; Desmulliez, Marc Phillipe Yves; Forbes, M.G.; Casswell, J.J.; Buller, Gerald S.; Taghizadeh, Mohammad R.; Dines, J.A.B.; Stanley, C.R.; Pennelli, Giovanni; Boyd, A.R.; Pearson, J. L.; Horan, P.; Byrne, David; Hegarty, J.; Eitel, S.; Gauggel, H.-P.; Gulden, K.; Gauthier, Alain; Bénabès, Philippe; Gutzwiller, Jean-Louis; Goetz, M.; Oksman, J.

doi:10.1109/jqe.2005.848909

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Cited by 7 publications

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“…[1][2][3][4] Future circuits based on nanometer-scale components could similarly benefit from optical information transfer among processing blocks. Strong light channeling (and even lasing) has been observed in GaN nanowires, suggesting that these structures could be useful building blocks in a future networked electro-optical processor.…”

Section: Introductionmentioning

confidence: 99%

Electron Beam-induced Light Emission and Transport in GaN Nanowires

Tringe

MoberlyChan

Stevens

et al. 2006

2006 1st International Conference on Nano-Networks and Workshops

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Abstract-We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined.

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Section: Introductionmentioning

confidence: 99%