Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band

Ĺuque, A.; Martı́, Antonio; López, N.; Antolín, E.; Cánovas, Enrique; Stanley, C.R.; Farmer, C.D.; Díaz, P.

doi:10.1063/1.2193063

Cited by 146 publications

(89 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…9 However, even though an increase in photocurrent has been observed in quantum dot IBSCs, they suffer from a significant voltage loss resulting in low conversion efficiency. 10,11 One of the main causes of the voltage reduction in the IBSCs is due to the short lifetime of electrons in the intermediate states, which is caused by fast non-radiative recombination. 12 In these cells, radiative and non-radiative recombination of carriers occurs before the two-photon absorption can take place, and this leads to a reduction in the quasi-Fermi level separation.…”

mentioning

confidence: 99%

Photon ratchet intermediate band solar cells

Yoshida

Ekins-Daukes

Farrell

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

In this paper, we propose an innovative concept for solar power conversion—the “photon ratchet” intermediate band solar cell (IBSC)—which may increase the photovoltaicenergy conversion efficiency of IBSCs by increasing the lifetime of charge carriers in the intermediate state. The limiting efficiency calculation for this concept shows that the efficiency can be increased by introducing a fast thermal transition of carriers into a non-emissive state. At 1 sun, the introduction of a “ratchet band” results in an increase of efficiency from 46.8% to 48.5%, due to suppression of entropy generation

show abstract

mentioning

confidence: 99%

Photon ratchet intermediate band solar cells

Yoshida

Ekins-Daukes

Farrell

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…2 In order to realize IBSCs, multistacked quantum dots ͑QDs͒ or a three-dimensional QD superlattice, 3-6 an impurity-band, 7 and a band anticrossing in a mismatched alloy semiconductor 8 have been proposed. The detailed balance model 1,9-11 and drift-diffusion method with an analytical expansion of the Poisson equation or current continuity equations [12][13][14][15] have been used to theoretically investigate the optimal combination of IB states and energy band gap of host material, operation under concentration, and effect of overlapping spectra of absorption coefficients. However, the detailed balance approach does not incorporate any physical information of device structure and the latter is not a selfconsistent treatment.…”

mentioning

confidence: 99%

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

Yoshida

Okada

Sano

2010

Applied Physics Letters

View full text Add to dashboard Cite

In order to design optimum structures for intermediate band solar cells, simulations based on self-consistent drift-diffusion model with a suitable treatment of the intermediate band in device domain are necessary. In this work, we have included the dependence of occupation rate of intermediate band at each position on optical generation rate via the intermediate band. Typical material parameters of GaAs were used except for the absorption coefficient of each corresponding band-to-band transition. Simulation results using our model indicate that the dependence of occupation rate on device position strongly affect short-circuit currents and also electrostatic potentials of the cell.

show abstract

“…In addition, when Z p or Z n becomes shorter than the diffusion length of the minority carriers, the recombination process 10(a) show that the efficiency is higher at smaller Z p or Z n . Note that the definition of EQE in (28) involves only J sc , which is related to the generation process; the recombination current is not considered.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Efficiency Improvement of P-I-N Solar Cell by Embedding Quantum Dots

Lin¹,

Kiang²

2014

PIER

View full text Add to dashboard Cite

Abstract-A model of solar cell embedding quantum dots in the intrinsic layer of a p-i-n solar cell has been presented. With proper selection of material, size and fractional volume, quantum dots can provide an intermediate band between the valence and conduction bands of the matrix material, which will absorb photons with energy lower than the original bandgap to absorb more incident photons in the otherwise unused spectral irradiance. The design approach to acquire the highest efficiency of the conventional p-i-n solar cell is presented as a benchmark. Quantum dots are then embedded in the intrinsic region of the reference solar cell to improve its efficiency. InAs is chosen to implement the quantum dots, to be embedded in the p-i-n solar cell made of GaAs. With a more packed arrangement of QD's from that in the literatures, the simulation results shows that the efficiency of the conventional GaAs p-i-n solar cell can be increased by 1.05%.

show abstract

Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band

Cited by 146 publications

References 13 publications

Photon ratchet intermediate band solar cells

Photon ratchet intermediate band solar cells

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

Efficiency Improvement of P-I-N Solar Cell by Embedding Quantum Dots

Contact Info

Product

Resources

About