Opposite resistive switching characteristics for (Ba0.6Sr0.4)TiO3 thin films on Ir and Pt bottom electrode

He, Xiliang; Li, Xiaomin

doi:10.1016/j.matlet.2013.01.032

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…Ba 1− x Sr x TiO 3 (BSTO) thin film is an important material because of its excellent properties, such as optical properties, resistive switching, dielectric properties, etc. Recently, it has been considered to be an important candidate material for various tunable microwave devices such as microwave tunable phase shifters, filters, oscillators, and antennas because of its high dielectric constant, relatively low dielectric loss tangent, and high tunability .…”

Section: Introductionmentioning

confidence: 99%

High Tunability of Nonepitaxially Grown Ba_0.6Sr_0.4TiO₃ Thin Films Prepared by Plasma‐Assisted Pulsed Laser Deposition

2013

J. Am. Ceram. Soc.

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Nonepitaxially grown Ba0.6Sr0.4TiO3 (NE‐BSTO) thin film with tunability of 65.4% and low leakage current was obtained on Ir electrode by oxygen plasma‐assisted pulsed laser deposition (PLD), and epitaxially grown Ba0.6Sr0.4TiO3 (E‐BSTO) thin film with tunability of 32.5% was obtained by PLD without plasma assistance. Results indicate that the NE‐BSTO film possessed higher oxygen content, lower tetragonal distortion, and low stress, all of which contributed to its excellent dielectric properties. This work demonstrates that NE‐BSTO thin films are well suited for room temperature tunable microwave device applications.

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Section: Introductionmentioning

confidence: 99%

High Tunability of Nonepitaxially Grown Ba_0.6Sr_0.4TiO₃ Thin Films Prepared by Plasma‐Assisted Pulsed Laser Deposition

2013

J. Am. Ceram. Soc.

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Perovskite-based emerging memories

Simanjuntak

Amrillah

Jalaluddeen

et al. 2023

Perovskite Ceramics

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Plume propagation and Pt film growth during shadow-masked pulsed laser deposition in a buffer Ar gas

Fominski¹,

Grigoriev²,

Gnedovets³

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Opposite resistive switching characteristics for (Ba0.6Sr0.4)TiO3 thin films on Ir and Pt bottom electrode

Cited by 5 publications

References 13 publications

High Tunability of Nonepitaxially Grown Ba_0.6Sr_0.4TiO₃ Thin Films Prepared by Plasma‐Assisted Pulsed Laser Deposition

High Tunability of Nonepitaxially Grown Ba_0.6Sr_0.4TiO₃ Thin Films Prepared by Plasma‐Assisted Pulsed Laser Deposition

Perovskite-based emerging memories

Plume propagation and Pt film growth during shadow-masked pulsed laser deposition in a buffer Ar gas

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Opposite resistive switching characteristics for (Ba0.6Sr0.4)TiO3 thin films on Ir and Pt bottom electrode

Cited by 5 publications

References 13 publications

High Tunability of Nonepitaxially Grown Ba0.6Sr0.4TiO3 Thin Films Prepared by Plasma‐Assisted Pulsed Laser Deposition

High Tunability of Nonepitaxially Grown Ba0.6Sr0.4TiO3 Thin Films Prepared by Plasma‐Assisted Pulsed Laser Deposition

Perovskite-based emerging memories

Plume propagation and Pt film growth during shadow-masked pulsed laser deposition in a buffer Ar gas

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Product

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High Tunability of Nonepitaxially Grown Ba_0.6Sr_0.4TiO₃ Thin Films Prepared by Plasma‐Assisted Pulsed Laser Deposition

High Tunability of Nonepitaxially Grown Ba_0.6Sr_0.4TiO₃ Thin Films Prepared by Plasma‐Assisted Pulsed Laser Deposition