In the last decade, we have seen very rapid and significant developments in Raman
scattering experiments on GaN and related nitride compounds: the Γ-point
phonon frequencies have been identified for both cubic and hexagonal structures
of binary compounds of GaN, AlN, and InN. The phonon spectra of their ternary
alloys, InGaN and AlGaN, were also intensively studied. On the basis of these
studies, characterizations of strain, compositional fluctuation, defects, impurities,
etc, are now being intensively conducted. Besides such pure lattice properties,
coupled modes between a lattice vibration (LO phonon) and a collective
excitation of free carriers (plasmon) in GaN have been thoroughly studied, and
the results are now widely applied to characterize carrier-transport properties.
Low-dimensional structures of nitrides such as quantum dots and superlattices
will soon enter the most active field of Raman scattering characterization. This
article briefly reviews the present status of Raman scattering experiments on
GaN and related nitride compounds and presents some future prospects.