1982
DOI: 10.1016/0040-6090(82)90228-0
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Optical absorption behaviour of evaporated CuxS thin films

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Cited by 43 publications
(19 citation statements)
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“…The reason for the difference between the reported values depends on the crystal structure of polymorphic compound CTS, where 0.98 eV was measured for a cubic phase and 1.35 eV for a tetragonal phase [19]. The polymorphic state of grown CTS depends on the growing temperature, where the cubic phase is known to form at high temperatures (>775°C) and the monoclinic and triclinic as well as the tetragonal phases are low-temperature phases (<775°C) [17,49]. It can be said that the estimated results decrease with increasing PEG amount and are in good agreement with literature values.…”
Section: Optical Resultsmentioning
confidence: 84%
“…The reason for the difference between the reported values depends on the crystal structure of polymorphic compound CTS, where 0.98 eV was measured for a cubic phase and 1.35 eV for a tetragonal phase [19]. The polymorphic state of grown CTS depends on the growing temperature, where the cubic phase is known to form at high temperatures (>775°C) and the monoclinic and triclinic as well as the tetragonal phases are low-temperature phases (<775°C) [17,49]. It can be said that the estimated results decrease with increasing PEG amount and are in good agreement with literature values.…”
Section: Optical Resultsmentioning
confidence: 84%
“…Direct band gap values of samples with pH values 6, 7, and 8 were found to be 1.3 eV, 1.35 eV, and 1.4 eV, respectively [3]. However, the sample with pH 9 has band gap 1.8 eV which corresponds to the Cu x S [31]. The change in the optical band gap of this sample is due to compositional difference.…”
Section: Optical Properties Optical Band Gap Of Czts Nanoparticles Wmentioning
confidence: 81%
“…where Nt is the density of trap states, ε r is the relative dielectric constant, ε 0 is the vacuum dielectric constant, R is the grain radius, α 0 is the value of the absorption coefficient at the photon energy hν¼E g , E g is the band-gap energy, B is given by αhν [8,27,28]. The results of the optical measurements showed the formation of secondary phases depending on deposition conditions.…”
Section: Resultsmentioning
confidence: 97%