Optical Absorption due to Free Holes in Germanium: A Comparison of Theory and Experiment

Predictions of Free-Carrier Electroabsorption and Electrorefraction in Germanium

“…We also found that incorporating the effect of temperature dependent lifetime broadening into the model substantially improved the agreement with literature data, which has previously been noted for the case of p-type absorption in Ge at low temperatures in [40]. We do this by replacing the Dirac delta function in (4) with a Lorentzian probability density function so that…”

Contribution of interband transitions to the conductivity of p‐Si at submillimeter wavelengths

“…Fawcett's calculations [5] take into account the interactions between the valence band and the two nearest conduction bands, the third one being included as a perturbation; the energies are calculated exactly starting from a 14 x 14 Hamiltonian. A better agreement with experiments on p-Ge was then obtained [6].…”

Tensile-strained germanium microdisks with circular Bragg reflectors

“…The free carrier and photo-induced near-infrared absorption is also reduced as the temperature is lowered, as a consequence of the reduction of the temperature-dependent lifetime broadening for the intravalley absorption. 23,24 Coupling of the spontaneous emission to the guided modes might also be modified by the temperature change. At very weak excitation power, a Lorentzian fit of the mode at 2042 nm gives a full width at half maximum of 1 nm, thus corresponding to a quality factor of 2000.…”