Optical absorption edge in SnS

Lambros, A.; Geraleas, D.; Economou, N. A.

doi:10.1016/s0022-3697(74)80008-9

Cited by 78 publications

(38 citation statements)

References 7 publications

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“…4(c). Clearly, the absorption corresponds to an indirect allowed transition with an energy gap of 1.6 eV for the nanocrystalline particles, higher than the literature value (1.1 eV) for bulk films of SnS [30,31]. Calculated the same way band gap value of sub-200 nm SnS particles synthesized by prolonged heating of Sn(Et 2 Dtc) 2 precursor is 1.06 eV which close to reported one for bulk SnS.…”

Section: Resultssupporting

confidence: 56%

Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor

2007

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SnS nanocrystals (NCs) were synthesized from bis(diethyldithiocarbamato) tin(II) in oleylamine at elevated temperature. High-resolution transmission electron microscopy (HRTEM) investigation and X-ray diffraction (XRD) analysis showed that the synthesized SnS particles are monocrystalline with an orthorhombic structure. The shape and size tunability of SnS NCs can be achieved by controlling the reaction temperature and time, and the nature of the stabilizing ligands. The comparison between experimental optical band gap values shows evidence of quantum confinement of SnS NCs. Prepared SnS NCs display strong absorption in the visible and near-infrared (NIR) spectral regions making them promising candidates for solar cell energy conversion.

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Section: Resultssupporting

confidence: 56%

Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor

2007

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“…4b) [28,36] The spectral dependence (dE/dP)K = f(E) of SnSe for E [ [ b a t E < E b (Fig. 4a) satisfies (1) with parameters El = 0.9 eV 1341 and dE;/dP = -(0.7 5 0.1) x x eV/MPa, and that one of SnS -with Ei = 1.1 eV [35] and dEL/dP = ---(0.9 f 0.2) x eV/MPa. For GeSe and GeS (Fig.…”

Section: Energy Region Of Weak Absorption (E < E Eb)mentioning

confidence: 89%

Optical spectra and energy band structure of layer‐type A^IVB^VI compounds

Valiukonis

Guseinova

Keivaitb

et al. 1986

Physica Status Solidi (b)

133

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The electroreflectance and absorption spectra as well as the hydrostatic pressure dependence of the fundamental absorption edge of GeS, GeSe, SnS, and SnSe crystals are investigated in polarized light. The lowest direct energy gaps are found to be 1V1— 1V1 (E | | a) and 1Λ4— 1Λ4 (E || b) for Ge and Sn monochalcogenides, respectively. The pressure coefficient of the energy gap 1Λ4— 1Λ4 dE/AP = = — (1.3 ± 0.1) × 10−4 eV/MPa of SnSe and SnS is almost twice larger than that of the gap 1V1— 1V1 in GeSe, GeS, and SnSe. On the basis of these investigations, different absorption mechanisms responsible for the fundamental absorption edge are discussed.

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“…Tin sulfide (SnS) is a potential candidate material to be used as absorber for lowcost thin film solar cells. SnS consists of non-toxic and earth-abundant elements, has a band gap between 1.1 and 1.4 eV [2][3], a high absorption coefficient N 10 4 cm −1 above 1.3 eV [4] and p-type conductivity. Despite all these advantages, single phase thin films are difficult to grow due to the formation of secondary phases such as SnS 2 and Sn 2 S 3 [5].…”

Section: Introductionmentioning

confidence: 99%

SnS thin films grown by sulfurization of evaporated Sn layers: Effect of sulfurization temperature and pressure

2016

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SnS thin films were grown by sulfurization of Sn layers evaporated by electron beam. The effect of sulfurization parameters, such as temperature and pressure, on the properties of tin sulfide layers has been investigated. Ar pressure used during the sulfurization has a strong impact on the development of a proper SnS/Mo back interface. However, the sulfurization temperature is the parameter that regulates the formation of an orthorhombic single phase SnS thin film with the optimum properties to be used as absorber for solar cell devices. Sulfurization temperature of 220 °C for 240 min led to the formation of single phase tin sulfide layers. Direct band gap energy about 1.2 eV has been determinedRC acknowledges financial support from Spanish MINECO within the Ramón y Cajal programme (RYC-2011-08521

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Optical absorption edge in SnS

Cited by 78 publications

References 7 publications

Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor

Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor

Optical spectra and energy band structure of layer‐type A^IVB^VI compounds

SnS thin films grown by sulfurization of evaporated Sn layers: Effect of sulfurization temperature and pressure

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Optical absorption edge in SnS

Cited by 78 publications

References 7 publications

Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor

Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor

Optical spectra and energy band structure of layer‐type AIVBVI compounds

SnS thin films grown by sulfurization of evaporated Sn layers: Effect of sulfurization temperature and pressure

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Optical spectra and energy band structure of layer‐type A^IVB^VI compounds