Optical absorption enhancement in inhomogeneous InGaN nanowire arrays photocathode

Abstract

In the development of surface structures, nanowire arrays (NWAS) have been widely studied because of their trapping effect. In this paper, the finite difference time domain (FDTD) method is used to simulate homogeneous and inhomogeneous NWAS. We studied the influence of the structural parameters of InGaN NWAS and inhomogeneous arrays on optical response properties. The optical response includes light absorptivity and cutoff wavelength sensitivity. The simulation results show that the inhomogeneous NWAS can increase the effective transmission distance of light on the surface, thus greatly improving the optical absorption capacity of InGaN NWAS. We can obtain high sensitivity of cut-off wavelength by adjusting the structural parameters of the side nanowires. We find that by reducing the diameters and heights of the side nanowires, a higher light absorption rate can be obtained, which is a 5% improvement compared to uniform NWAS. Therefore, the research in this paper can provide some theoretical reference for the experiment and preparation of InGaN photocathodes.

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array

“…In order to absorb solar energy as high as possible, nanostructures of different shapes have been continuously developed. − More and more research results have shown that InGaN nanostructures can achieve higher incident light absorption through antireflection. These are mainly attributed to the trapping effect of nanostructures. , Zhangyang et al used first-principles to calculate the electrical and optical properties of InGaN NWA structures under different In components.…”