Optical Absorption in Pure Single Crystal InSb at 298° and 78°K

Kurnick, Sarah; Powell, John M.

doi:10.1103/physrev.116.597

Cited by 120 publications

(12 citation statements)

References 20 publications

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“…[2][3][4][5][6][7] Infrared absorption has been studied for the binaries, namely, GaSb [8][9][10][11] and InSb. [12][13][14][15][16] To the best of our knowledge, this is the first report on the infrared transmission characteristics of bulk Ga 1-x In x Sb which has a tunable bandgap in the range of 0.17-0.73 eV (1.77-6.8 µm).…”

Section: Introductionmentioning

confidence: 93%

Influence of native defects on the infrared transmission of undoped Ga1−xInxSb bulk crystals

Kim

Chandola

Guha

et al. 2005

Journal of Elec Materi

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The below bandgap infrared transmission (up to 25 µm) in undoped Ga 1-x In x Sb bulk crystals has been studied for the first time and found to be limited by native defects such as antisites and vacancies found in antimonide-based III-V compounds. For the gallium-rich alloy compositions (x Ͻ 0.5 in Ga 1-x In x Sb), the crystals exhibit p-type conductivity with an increase in net acceptor concentration and an increase in gallium content in the crystals. For x Ͼ 0.5 (the indium-rich alloy compositions), the crystals exhibit n-type conductivity when the net donor concentration and indium content in the crystals increase. A correlation between the optical transmission and the residual carrier concentration arising from the native acceptors and donors has been observed. Due to donor-acceptor compensation, crystals with alloy compositions in the range of x ϭ 0.5-0.7 exhibit high optical transmission for a wide wavelength range (up to 22 µm). The light hole to heavy hole interband transition in the valence band and the free electron absorption in the conduction band have been found to be the two dominant absorption processes.

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Section: Introductionmentioning

confidence: 93%

Influence of native defects on the infrared transmission of undoped Ga1−xInxSb bulk crystals

Kim

Chandola

Guha

et al. 2005

Journal of Elec Materi

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“…The energy of a CO 2 laser (0.117 eV) is below the absorption edge of InSb, and therefore provides a direct measurement of the carrier concentration. 3,4 We require intrinsic (undoped) InSb for our transducer development. Our InSb has been purchased from Bayville Chemical Supply Co. (Deer Park, NY).…”

Section: B Optical Absorption At 106 μMmentioning

confidence: 99%

Low frequency pressure modulation of indium antimonide

Hallock

Meier

2012

Review of Scientific Instruments

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A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient α of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

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“…It was assumed that the cross section for the absorption by holes u p (cP > uN) is independent of 1. This assumpt,ion is justified a t To = 77 O K in ourspectral range [24]. M , M , had a fast response less than 0.2 p s which was shown by the coincidence of the form of modulation impulse and current in all specimens.…”

Section: Experimental Methodsmentioning

confidence: 87%

Faraday and Kerr Effects of Hot Electrons in n‐Type InSb in the Infrared (I)

Vorob’ev

Komissarov

Stafeev

1972

Physica Status Solidi (b)

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The nonparabolicity of the conduction band and the anisotropy of the hot electron distribution function have been shown to lead to the anisotropy of the refraction index in strong electric fields (Kerr effect). Nonparabolicity causes also a decrease of the Faraday rotation angle 6 when the electron gas is heated. A comparison of the calculated values of A 8 with the experimental ones allows to determine the temperature of hot electrons for n-type InSb with concentrations of the electrons in the range of 3 x 1014 to 4.9 x 1015 cm-3 a t To = 80 O K in longitudinal magnetic fields. The interaction constant with polar optical phonons was also determined. The influence of e-e collisions on the distribution function of hot electrons is discussed. pacnpenenemm ropmmx ~J I~K T P O H O B IIPHBOAHT IE ~H H~O T P O I I E I H ~O I E~~~T~J I I I

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Optical Absorption in Pure Single Crystal InSb at 298° and 78°K

Cited by 120 publications

References 20 publications

Influence of native defects on the infrared transmission of undoped Ga1−xInxSb bulk crystals

Influence of native defects on the infrared transmission of undoped Ga1−xInxSb bulk crystals

Low frequency pressure modulation of indium antimonide

Faraday and Kerr Effects of Hot Electrons in n‐Type InSb in the Infrared (I)

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