Optical absorption in ultrathin silicon oxide films near the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>/Si interface

Terada, Naozumi; Haga, Takashi; Miyata, Noriyuki; Moriki, Kazunori; Fujisawa, Masami; Morita, Mizuho; Ohmi, Tadahiro; Hattori, Takeo

doi:10.1103/physrevb.46.2312

Cited by 26 publications

(7 citation statements)

References 25 publications

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“…c-Si sample covered with native oxide layer was irradiated in stainless steel chamber filled with oxygen in the energy density range from 400 to 1100 mJ/cm 2 . TRR spectra which have been obtained during irradiation of c-Si were calibrated as in the previous section where F = 284 and R s = 35% [14]. Plotting maximum reflectivities of TRR spectra as a function of energy densities, the experimental points in Figure 2.…”

Section: Application Of the Reflectivity Methods Onmentioning

confidence: 99%

Time‐resolved reflectivity technique: improvement and applications

El-Kader

1999

International Journal of Photoenergy

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A new method for determination of the reflectivity of Si in different phase transitions during pulsed laser irradiation is presented in this paper. This method is applied on TRR spectra of crystalline silicon (c-Si) in a medium of oxygen and amorphous hydrogenated silicon (a-Si : H). Time resolved reflectivity (TRR) measurements on silicon has been made during pulsed XeCl excimer laser irradiation (308 nm, 28nm FWHM) in a medium of oxygen. The samples were irradiated in the energy density range 400Ã¢ÂˆÂ’100mJ/cm2. The reflectivity was measured with a probe He-Ne laser (632.8 nm). Depending on the energy density of the excimer pulse, heating, melting and resolidification of the surface were monitored by TRR spectra. From these measurements we were able to determine the melting threshold energy density for c-Si, depending on the energy densities, time of melting and maximum reflectivity have been measured. TRR spectra of a sample with 3ÃŽÂ¼m thick a-Si layer for first shot of measurements were calibrated. A series of a-Si : H samples of the same thickness (0.34 ÃŽÂ¼m) irradiated with a constant energy density 450mJ/cm2 and the three consecutive TRR spectra of the irradiated samples were calibrated

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Section: Application Of the Reflectivity Methods Onmentioning

confidence: 99%

Time‐resolved reflectivity technique: improvement and applications

El-Kader

1999

International Journal of Photoenergy

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“…The reason may be due to the removal of silicon oxide layers on the nanowires which can act as antireflective layer to ensure the light adsorption. 44,45 Photocatalytic acitivities of porous and nonporous SiNWAs…”

Section: Characterization Of Sinwasmentioning

confidence: 99%

Highly active and enhanced photocatalytic silicon nanowire arrays

Wang

Yang

et al. 2011

Nanoscale

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Nanoporous and nonporous three-dimensional silicon nanowire arrays (SiNWAs) prepared with metal-assisted chemical etching method were investigated as photocatalysts in dye photodegradation systematically. In comparison with nonporous SiNWAs, nanoporous SiNWAs have higher surface area, larger pore volume, stronger light absorption and better photocatalytic activity. After the HF-treatment, the photocatalytic activity of all kinds of SiNWAs increased significantly and the nanoporous SiNWAs showed excellent stability. The photocatalytic activity of different types of SiNWAs with hydrogen surface termination can be recovered by HF treatment. This study also reveal that the hydrogen terminated surfaces on silicon nanowires (SiNWs) enhance the performance of SiNWAs by increasing their photocatalytic activity.

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“…The green curve (square) shows a peak at 4.1 eV, which corresponds nicely with a defect state predicted by O'Reilly et al 25 This predicted state has also been identified by optical absorption. 26 Slightly lower in energy two peaks can be seen in both the black curve (circle) and red curve (down triangle), at approximately 3.7 eV. There is no experimental evidence in the literature that points to the existence of this state.…”

Section: Resultsmentioning

confidence: 98%

“…The peak, however, corresponds nicely with the state predicted by theory, 25 at 4.1 eV and identified by optical absorption. 26 Below midgap, any evidence of the individual peaks is washed out as well. The average fits nicely with previous theory, which predicts many, closely spaced (in energy) states a few eV below midgap.…”

Section: Resultsmentioning

confidence: 99%

Local density of trap states in SiO2 and Si3N4 films studied by single electron tunneling force spectroscopy

Winslow

Williams

2011

Journal of Applied Physics

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Articles you may be interested inEffect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n+-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy Appl. Phys. Lett. 105, 232401 (2014); 10.1063/1.4903478 Measurement of depth and energy of buried trap states in dielectric films by single electron tunneling force spectroscopy Appl. Phys. Lett. 98, 052902 (2011); 10.1063/1.3549150 Band alignment issues related to Hf O 2 ∕ Si O 2 ∕ p -Si gate stacks

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Optical absorption in ultrathin silicon oxide films near theSiO2/Si interface

Cited by 26 publications

References 25 publications

Time‐resolved reflectivity technique: improvement and applications

Time‐resolved reflectivity technique: improvement and applications

Highly active and enhanced photocatalytic silicon nanowire arrays

Local density of trap states in SiO2 and Si3N4 films studied by single electron tunneling force spectroscopy

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