Optical absorption spectra as a useful tool to find parameters of deep impurity centers in semiconductors

Abstract

We analyze physical models accounting for deep-level conduction band transitions to describe impurity absorption spectra in tetrahedral-structured semiconductors. The investigations were carried out for ZnSe crystals doped with transition metals (Ti, V, Cr, Mn, Fe, Co, Ni) from a vapor phase. It was shown that the impurities provide acceptor centers with ground state energy offset by 0.3-0.6 eV from the edge of the conduction band, forming long-wave bands in the absorption spectra of the materials studied.

Influence of Pressure on the Electronic and Magnetic Properties of the ZnSeTe Solid Solution Doped with Fe Atoms

“…The investigations were carried out for ZnSe crystals doped with transition metals (Ti, V, Cr, Mn, Fe, Co, Ni) from a vapor phase. It was shown that the impurities provide acceptor centers with ground state energy offset by 0.3-0.6 eV from the edge of the conduction band, forming long-wave bands in the absorption spectra of the materials studied [5].…”

“…We analyze physical models accounting for deeplevel conduction band transitions to describe impurity absorption spectra in tetrahedral-structured semiconductors [5]. The investigations were carried out for ZnSe crystals doped with transition metals (Ti, V, Cr, Mn, Fe, Co, Ni) from a vapor phase.…”