Optical absorption spectra of a-Si : H films in TFT structure

Park, Hyuk-Ryeol; Oh, Dong-Sun; Jang, Jin; Soh, H. S.

doi:10.1016/0038-1098(95)00522-6

Cited by 3 publications

(2 citation statements)

References 10 publications

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“…The positive Fermi level shift and the dark conductivity decrease in atmospheric adsorption of µc-Si:H may correspond to the positive threshold voltage shift and the drain current decrease in positive bias-stress induced instabilities in a-Si:H TFTs, respectively. Furthermore, the same resultswere observed for the CPM spectra in µc-Si:H and a-Si:H TFTs with a built-in upward band-bending [8,12,13].Furthermore, dark conductivity increase and negative Fermi level shift in atmospheric adsorption of µc-Si:H may correspond to the drain current increase and the negative threshold voltage shift in negative bias-stress induced instabilities in a-Si:H TFTs. In TFTs, Negative bias-stress makes downward built-in band-bending due to the trapped holes within gate insulator.…”

Section: Discussionsupporting

confidence: 65%

“…Positive (Negative) bias-stress makes upward (downward)built-in band-bending due to the trapped electrons (holes) within gate insulator. Previously, we applied CPM to measure optical absorption spectra of a-Si:H films in TFT structure and the behavior of CPM spectra upon band-bending between gate and source-drain channel were investigated [12,13]. The observed spectra showed a reduced defect absorption, compared with that under flat-band condition, when band-bending (either upward or downward) is formed at a-Si:H/a-SiN:H interface.…”

Section: Resultsmentioning

confidence: 99%

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New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

Lim

Park

2014

IJMSA

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Abstract:In this investigation, we added some new findings and interpretations on the behaviors of both electrical conductivities and optical absorption spectra upon adsorption of atmospheric molecules in microcrystalline silicon films (µc-Si:H). The photo conductivity followed similar decay-recover processes upon air exposure-thermal anneal cycles as did the dark conductivity. The dark and photo conductivities decay according to a stretched-exponential function with time upon air exposure. The absorption spectra showed a reduced defect absorption for the films at air exposed state compared with those of at thermal annealed state. There is a one-to-one correspondence between atmospheric adsorption in µc-Si:H and bias-stress induced instabilities in a-Si:H thin film transistors(TFTs).

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Section: Discussionsupporting

confidence: 65%

Section: Resultsmentioning

confidence: 99%

New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

Lim

Park

2014

IJMSA

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Optical absorption spectra of a-Si:H MIS structure measured by transient photocapacitance spectroscopy

Bang

Park

2007

Journal of Non-Crystalline Solids

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Amorphous Silicon Thin-Film Transistors with a Hot-Wire Active-Layer Deposited at High Growth Rate

et al. 1997

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High-quality thin film transistors (TFT) with hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire (HW) chemical vapor deposition as the active layer at growth rates above 20 Å/s are compared to TFTs with a-Si:H deposited by RF glow discharge at 1 Å/s. The subgap absorption measured by the constant photocurrent method and steady-state photoconductivity measured between source and drain are used to characterize the a-Si:H in the TFT. The activation energy of the dark conductivity is measured as a function of the gate voltage to obtain the position of the Fermi level. The effect of a bias stress on the TFT transfer curve is obtained.

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Optical absorption spectra of a-Si : H films in TFT structure

Cited by 3 publications

References 10 publications

New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

Optical absorption spectra of a-Si:H MIS structure measured by transient photocapacitance spectroscopy

Amorphous Silicon Thin-Film Transistors with a Hot-Wire Active-Layer Deposited at High Growth Rate

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