Optical absorption coefficients of electrodeposited CuInSe, thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 400 to 2000 nm. As-deposited CuInSe, is found to be a direct-gap semiconductor with an allowed direct transition whose gap energy is Ega = 0.96 eV and a forbidden direct transition whose gap energy is Egf = 1.38 eV. After heat treatment of the films at 400 "C, a decrease in the optical absorption was observed at energies below 1.1 eV. Heat-treated films showed an allowed direct transition with EL, = 1.00 eV, close to the value for as-deposited samples, but in this last case the forbidden direct transition was not observed.