Optical and Dynamic Properties of ZnGa₂S₄

Abstract

ZnGa2S4 luminescent compound is prepared by solid‐state reaction, which is confirmed by X‐ray diffraction to have a tetragonal structure. The photoluminescence (PL) emission and excitation spectra, infrared (IR) reflectivity and Raman scattering of the defective ZnGa2S4 compound are studied experimentally. High stability of the shape and peak positions of the PL spectra is observed in a wide range temperature range (100–290 K). It was determined that PL intensity increases with decreasing temperature. Higher correlated color temperature (CCT) value >6000 K implies the suitability of using this material for light emitting diodes. Five modes of optical phonons are found in both IR reflectance and Raman spectra of ZnGa2S4 and identified from point group symmetry analysis. The calculations of the dynamic properties are carried out within the framework of the density functional theory (DFT) with full optimization of the lattice parameters. Results of calculations show that, the phonon‐dispersion curve is sensitive to S–Se replacement in ZnGa2S4 and gives rise to clearly pronounced energy gaps in the phonon spectrum.

Photoluminescence and phonon spectrum studies of arsenide sulfide compound doped with rare earth elements

“…The PL lines depicted in Figure 1 are mainly related to the Fermi level and defect states located in the center of the band gap. Photoluminescence spectra in this region (at 800-950nm) were also observed in our previous work [12][13][14][15][16][17][18][19][20][21][22][23][24].…”

X-ray diffraction and differential scanning calorimetry analysis of CuInZnSe-=SUB=-3-=/SUB=-

“…Recently, the focus is on the study of a crystal structure, optical and thermal properties of the semiconductor compounds with various physical properties [1][2][3][4][5]. Among semiconductor compounds, the A 2 B 2 and A 1 B 2 2 chalcogenides occupy a very special place [6][7][8][9][10].…”