Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition

Yao, Pin-Chuan; Hang, Shih-Tse; Lin, Yu-Shuan; Yen, Wen-Tsai; Lin, Yi‐Cheng

doi:10.1016/j.apsusc.2010.08.064

Cited by 63 publications

(24 citation statements)

References 36 publications

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“…In Fig. 3(c), it can be observed that the binding energies of Al 2p for AZO particles are lower than that of Al 3+ (74.8 eV) but higher than that of elemental Al (72.7 eV), and these can be attributed to nonstoichiometric Al x O y (y/x < 1.5) [29,30]. These results confirm that Al is doped into ZnO matrix.…”

Section: Resultssupporting

confidence: 86%

Degradation kinetics for photocatalytic reaction of methyl orange over Al-doped ZnO nanoparticles

Lee

Kim

Park

et al. 2015

Journal of Industrial and Engineering Chemistry

108

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Section: Resultssupporting

confidence: 86%

Degradation kinetics for photocatalytic reaction of methyl orange over Al-doped ZnO nanoparticles

Lee

Kim

Park

et al. 2015

Journal of Industrial and Engineering Chemistry

108

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“…Doping ZnO with Al, has been one of the effective methods to enhance the conductivity of ZnO. There has been quite a bit of literature on Al-doping of ZnO which successfully enhanced it's conductivity [18,19,20,21]. However, there has not been enough focus on the application of such AZO materials in PEC solar cells in the available literature.…”

Section: Introductionmentioning

confidence: 99%

“…ZnO nanostructured photoelectrodes have been confirmed to improve the electron transfer by virtue of eliminating the grain boundaries [18]. Furthermore, the charge carrier concentration and mobility and hence conductivity of ZnO can be improved in order to enhance it's PEC performance [19]. Doping ZnO with Al, has been one of the effective methods to enhance the conductivity of ZnO.…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic Properties of Aluminum Doped Zinc Oxide Electrodes Based on Variation of Aluminum Impurities in the Semiconductor

Tyona¹,

Osuji²,

Lokhande³

et al. 2018

JMPC

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Photoelectrochemical (PEC) solar cell studies of Al doped zinc oxide (AZO) thin film electrodes has been carried out by photocurrent-voltage (I-V) characteristic. The concentration of Al in ZnO was varied between 1-5 at.% in order to study the effect of the variation on the photovoltaic performance of the electrodes. The currentvoltage (I-V) characteristics measured in the dark and under 80 W simulated illumination revealed enhanced PV performance for the AZO electrodes in contrast to the undoped electrode. The best response was achieved for AZO electrode with 2 at.% Al concentration thus, recording higher conversion efficiency and fill factor. This is a clear indication that AZO electrodes are superior to undoped ZnO in PV applications. The remarkable enhanced properties of Al doping on ZnO were carefully studied by means of thickness measurement, X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-Vis spectroscopy, and the results were in good agreement, and confirmed that AZO thin film electrodes are better for PV applications than undoped ZnO semiconductor in sodium sulphate (Na 2 SO 4 ) electrolyte.

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“…Within a moderate Al-doping, it is known that the broadening of E g is associated with partial filling of states above the conduction band minimum of AZO -known as BursteinMoss effect, 8 whereas the carrier concentration above the Mott critical density is known to be associated with decreasing E g due to the modification of the bands through electron-electron and electron-impurity interactions. 9 Different techniques have been employed so far to synthesize AZO films, which includes pulsed laser deposition, 5 chemical processing, 10 direct current (dc) sputtering, 8 etc. In this paper, we report on the effect of AZO thickness on the current-voltage (I-V) and capacitorvoltage (C-V) characteristics of n-AZO/p-Si heterojunction diodes and how the grains are related to it.…”

Section: Introductionmentioning

confidence: 99%

Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes

2013

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We report on room temperature diode characteristics of ZnO:Al (AZO)/Si heterostructures by current-voltage measurements. In this study, with increasing AZO film thickness, systematic reduction in the turn-on potential (from 3.16 to 1.80 V) and the film stress are observed. Complementary capacitance-voltage studies reveal a decreasing trend in barrier height at the junction with increasing AZO film thickness. A gradual decrease in resistivity takes place with increasing AZO film thickness. Above observations are explained in the framework of AZO thickness dependent variation in grain size and in turn trap density at the grain boundaries influencing carrier transport across the adjacent grains.

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Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition

Cited by 63 publications

References 36 publications

Degradation kinetics for photocatalytic reaction of methyl orange over Al-doped ZnO nanoparticles

Degradation kinetics for photocatalytic reaction of methyl orange over Al-doped ZnO nanoparticles

Photovoltaic Properties of Aluminum Doped Zinc Oxide Electrodes Based on Variation of Aluminum Impurities in the Semiconductor

Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes

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