Optical and electrical characterization of CIGS thin films grown by electrodeposition route

Review of CIGS-based solar cells manufacturing by structural engineering

“…The cost of production and complex vacuum processes compels researchers to develop low-cost and simple non-vacuum methods (Adel et al, 2016;Badgujar et al, 2015;Chen et al, 2017aChen et al, , 2017bKaelin et al, 2004;Kuo et al, 2016;Lee et al, 2011;Liu et al, 2012). The nonvacuum techniques are better in and stoichiometric control and material utilization, require low energy input and exhibit high compatible processing compared to the vacuum techniques (Badgujar et al, 2015;Chen et al, 2017a;Kuo et al, 2016;Lee et al, 2011;Liu et al, 2012).…”

“…The nonvacuum techniques are better in and stoichiometric control and material utilization, require low energy input and exhibit high compatible processing compared to the vacuum techniques (Badgujar et al, 2015;Chen et al, 2017a;Kuo et al, 2016;Lee et al, 2011;Liu et al, 2012). Nonvacuum techniques can be used in a two-step process, for example, deposition or printing of the CIGS precursor layer at low temperature and then followed by the selenization process at high temperature (Adel et al, 2016;Badgujar et al, 2015;Chen et al, 2017a;Kaelin et al, 2004;Kuo et al, 2016;Lee et al, 2011;Liu et al, 2012). Moreover, according to the deposition process, the first step to obtaining the precursor layer can be classified into electroless deposition (chemical bath deposition and electrodeposition) (Adel et al, 2016;Kaelin et al, 2004) and particulate/solution deposition (spin/spray coating and paste coating; screen/inkjet printing, doctor-blade coating, and curtain coating) (Badgujar et al, 2015;Chen et al, 2017a;Kuo et al, 2016;Lee et al, 2011;Liu et al, 2012).…”

“…Nonvacuum techniques can be used in a two-step process, for example, deposition or printing of the CIGS precursor layer at low temperature and then followed by the selenization process at high temperature (Adel et al, 2016;Badgujar et al, 2015;Chen et al, 2017a;Kaelin et al, 2004;Kuo et al, 2016;Lee et al, 2011;Liu et al, 2012). Moreover, according to the deposition process, the first step to obtaining the precursor layer can be classified into electroless deposition (chemical bath deposition and electrodeposition) (Adel et al, 2016;Kaelin et al, 2004) and particulate/solution deposition (spin/spray coating and paste coating; screen/inkjet printing, doctor-blade coating, and curtain coating) (Badgujar et al, 2015;Chen et al, 2017a;Kuo et al, 2016;Lee et al, 2011;Liu et al, 2012). In the electroless deposition, the precursor layer is deposited using complexing agents to decrease all individual precursor element potentials or make them similar to each other (Adel et al, 2016;Kaelin et al, 2004;Ramanujam and Singh, 2017).…”

“…Solar cells based on CIGS have high efficiency that is similar to that of crystalline silicon (c-Si) solar cells but are less expensive because CIGS can absorb light using only ~2.0-2.5 mm layer thickness, which decreases the use of raw materials (Guillemoles, 2002;Noufi and Zweibel, 2006;Ramanujam and Singh, 2017). The CIGS-based solar cells are easy to fabricate compared to c-Si based solar cells by growing it on various rigid and flexible substrates by vacuum and non-vacuum techniques; thus, CIGS-based solar cells are promising candidates for the nextgeneration power-efficient solar cells (Adel et al, 2016;Badgujar et al, 2015;Chen et al, 2017aChen et al, , 2014Choi and Lee, 2007;Delahoy et al, 2004;He et al, 2019;Kaelin et al, 2004;Kuo et al, 2016;Kushiya et al, 2001;Lee et al, 2011;Liu et al, 2012;Nakada et al, 1999;Park et al, 2003;Repins et al, 2008;Tsai et al, 2013;Venkatachalam et al, 2008). In addition to CdTe thin films, CIGS is included in the second-generation thin-film solar cells but CIGS is non-toxic compared to CdTe (Noufi and Zweibel, 2006;Ramanujam and Singh, 2017).…”

Characterization and photoelectrochemical properties of CICS thin films grown via an electrodeposition route

“…It is generally expected that the capacitance at the semiconductorelectrolyte interface is controlled by that of the semiconductor. Thus, to evaluate the conduction type, the at band potential (V  ) and carrier densities (N) of CICS lms, we apply Boltzmann statistics to obtain Mott-Schottky equation given as follows: 41 1…”