Optical and electrical properties of SnS semiconductor crystals grown by physical vapor deposition technique

Hegde, Shweta; Kunjomana, A. G.; Chandrasekharan, K. A.; Ramesh, K.; Prashantha, M.A.B.

doi:10.1016/j.physb.2010.12.068

Cited by 99 publications

(49 citation statements)

References 32 publications

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“…Thus, the indirect bandgap of SnS is 0.982 eV which is comparable with the experimental results. 26,38,39 By replacing a Sn atom with a Cu atom, the indirect bandgap decreased to 0.864 eV as shown in Fig. 1(b).…”

Section: Energy Band Simulationmentioning

confidence: 92%

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Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

Wang¹,

Leung²,

Fong³

et al. 2012

Journal of Applied Physics

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We report on the systematic investigation of optoelectronic properties of tin (IV) sulfide (SnS) van der Waals epitaxies (vdWEs) grown by molecular beam epitaxy (MBE) technique. Energy band simulation using commercial CASTEP code indicates that SnS has an indirect bandgap of size 0.982 eV. Furthermore, our simulation shows that elemental Cu can be used as a p-type dopant for the material. Growth of high quality SnS thin films is accomplished by MBE technique using graphene as the buffer layer. We observed significant reduction in the rocking curve FWHM over the existing published values. Crystallite size in the range of 2–3 μm is observed which is also significantly better than the existing results. Measurement of the absorption coefficient, α, is performed using a Hitachi U-4100 Spectrophotometer system which demonstrate large values of α of the order of 104 cm−1. Sharp cutoff in the values of α, as a function of energy, is observed for the films grown using a graphene buffer layer indicating low concentration of localized states in the bandgap. Cu-doping is achieved by co-evaporation technique. It is demonstrated that the hole concentration of the films can be controlled between 1016 cm−3 and 5 × 1017cm−3 by varying the temperature of the Cu K-cell. Hole mobility as high as 81 cm2V−1s−1 is observed for SnS films on graphene/GaAs(100) substrates. The improvements in the physical properties of the films are attributed to the unique layered structure and chemically saturated bonds at the surface for both SnS and the graphene buffer layer. Consequently, the interaction between the SnS thin films and the graphene buffer layer is dominated by van der Waals force and structural defects at the interface, such as dangling bonds or dislocations, are substantially reduced.

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Section: Energy Band Simulationmentioning

confidence: 92%

“…[26][27][28] In addition, the constituent elements are both abundantly found in the earth's crust and non-toxic which makes SnS an excellent candidate for large-scale deployment. 29 SnS-based heterojunction photovoltaic cells (PVCs) have been fabricated by various techniques with CdS as the common choice for the n-type semiconductor.…”

mentioning

confidence: 99%

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

Wang¹,

Leung²,

Fong³

et al. 2012

Journal of Applied Physics

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“…Cadmium telluride (CdTe) or copper indium gallium diselenide (Cu(In, Ga)Se 2 or CIGS) are the greatest materials for fabrication of thin film solar cells. However, the existence of indium and gallium in nature is low [3] and because of toxicity of cadmium, SnS is a great alternative. SnS is cheap, non-toxic and Sn and S elements are plentiful in nature [4].…”

Section: Introductionmentioning

confidence: 99%

Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films

Kafashan

Azizieh

Vatan

2016

Journal of Alloys and Compounds

106

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“…8,35 The measured properties of SnS samples depend on the synthesis route. 9,[36][37][38][39] Theory and atomistic simulation can contribute significantly in clarifying how the properties of SnS and other layered semiconductors depend on the atomicscale structural features. 12,25,27,30,32,40,41 Here, we use firstprinciples calculations based on density functional theory and the GW approximation to the electron self-energy to study trends in the electronic and optical properties of model single-layer, double-layer, and bulk structures of SnS.…”

mentioning

confidence: 99%

Optoelectronic properties of single-layer, double-layer, and bulk tin sulfide: A theoretical study

Tritsaris¹,

Malone²,

Kaxiras³

2013

Journal of Applied Physics

139

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SnS is a metal monochalcogenide suitable for use as absorber material in thin film photovoltaic cells. Its structure is an orthorhombic crystal of weakly coupled layers, each layer consisting of strongly bonded Sn-S units. We use first-principles calculations to study model single-layer, double-layer, and bulk structures of SnS in order to elucidate its electronic structure. We find that the optoelectronic properties of the material can vary significantly with respect to the number of layers and the separation between them: the calculated band gap is wider for fewer layers (2.72 eV, 1.57 eV, and 1.07 eV for single-layer, double-layer, and bulk SnS, respectively) and increases with tensile strain along the layer stacking direction (by $55 meV/1% strain). V C 2013 AIP Publishing LLC.

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Optical and electrical properties of SnS semiconductor crystals grown by physical vapor deposition technique

Cited by 99 publications

References 32 publications

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

Ultrasound-assisted electrodeposition of SnS: Effect of ultrasound waves on the physical properties of nanostructured SnS thin films

Optoelectronic properties of single-layer, double-layer, and bulk tin sulfide: A theoretical study

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