Optoelectronic properties of single-layer, double-layer, and bulk tin sulfide: A theoretical study

Tritsaris, Georgios A.; Malone, Brad D.; Kaxiras, Efthimios

doi:10.1063/1.4811455

Cited by 139 publications

(112 citation statements)

References 61 publications

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“…Georgies et al [10], Makinistian et al [19] and Parenteau et al [21] works show that the band gap of SnS is directly proportional to the unit cell's volume, with band gap approaching small values as volume decreases. Fig 8 show the results of our calculations for samples grown on ITO and glass respectively for different thicknesses.…”

Section: Structure Of Sns For Various Lattice Parametersmentioning

confidence: 99%

“…Considering that the variation in lattice parameters would result in residual stress effects that would manifest as pressure, we expect changes in conduction band, valence band shapes and band gaps [10,19]. Georgies et al [10], Makinistian et al [19] and Parenteau et al [21] works show that the band gap of SnS is directly proportional to the unit cell's volume, with band gap approaching small values as volume decreases.…”

Section: Structure Of Sns For Various Lattice Parametersmentioning

confidence: 99%

“…Residual strain can be evaluated from the displacement of the X-ray diffraction peaks from which lattice parameters are then evaluated. The lattice strain is given as [10] …”

Section: The Structural and Morphological Analysismentioning

confidence: 99%

“…The band structure of SnS has been theoretically evaluate quite extensively [7,9,10,18,19]. We have performed ab initio calculations of the SnS electronic band structure in the framework of the density functional theory (DFT) as implemented in the WIEN2k software [20], adopting the Engel-Vosko approximation for the exchange-correlation potential.…”

Section: Band Structure Calculationmentioning

confidence: 99%

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Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

et al. 2016

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The parameters influencing the band gap of tin sulphide thin nano-crystalline films have been investigated. Both grain size and lattice parameters are known to influence the band gap. The present study initially investigates each contribution individually. The experimentally determined dependency on lattice parameter is verified by theoretical calculations. We also suggest how to treat the variation of band gap as a two variable problem. The results allow us to show dependency of effective mass (reduced) on lattice unit volume.

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Section: Structure Of Sns For Various Lattice Parametersmentioning

confidence: 99%

Section: Structure Of Sns For Various Lattice Parametersmentioning

confidence: 99%

“…Residual strain can be evaluated from the displacement of the X-ray diffraction peaks from which lattice parameters are then evaluated. The lattice strain is given as [10] …”

Section: The Structural and Morphological Analysismentioning

confidence: 99%

Section: Band Structure Calculationmentioning

confidence: 99%

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Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

et al. 2016

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“…Monolayers of layered orthorhombic materials [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] can become disordered at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers

et al. 2016

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Ridged, orthorhombic two-dimensional atomic crystals with a bulk Pnma structure such as black phosphorus and monochalcogenide monolayers are an exciting and novel material platform for a host of applications. Key to their crystallinity, monolayers of these materials have a four-fold degenerate structural ground state, and a single energy scale E C (representing the * To whom correspondence should be addressed † Department of Physics. elastic energy required to switch the longer lattice vector along the x− or y−direction) determines how disordered these monolayers are at finite temperature. Disorder arises when nearest neighboring atoms become gently reassigned as the system is thermally excited beyond a critical temperature T c that is proportional to E C /k B . E C is tunable by chemical composition and it leads to a classification of these materials into two categories: (i) Those for which E C ≥ k B T m , and (ii) those having k B T m > E C ≥ 0, where T m is a given material's melting temperature. Black phosphorus and SiS monolayers belong to category (i): these materials do not display an intermediate order-disorder transition and melt directly. All other monochalcogenide monolayers with E C > 0 belonging to class (ii) will undergo a two-dimensional transition prior to melting. E C /k B is slightly larger than room temperature for GeS and GeSe, and smaller than 300 K for SnS and SnSe monolayers, so that these materials transition near room temperature. The onset of this generic atomistic phenomena is captured by a planar Potts model up to the orderdisorder transition. The order-disorder phase transition in two dimensions described here is at the origin of the Cmcm phase being discussed within the context of bulk layered SnSe.

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Growth of Large‐Area SnS Films with Oriented 2D SnS Layers for Energy‐Efficient Broadband Optoelectronics

Patel

Kim

2018

Adv Funct Materials

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The anisotropic properties of 2D orthorhombic SnS (tin monosulfide, p-type) layers can be utilized in energy-efficient optoelectronics by growing 2D SnS layers with a preferred orientation. To meet such a need, a strategy for growing SnS layers with the control of structural parameters such as orientation and thickness is highly desired. This report demonstrates a simple procedure for growing a large-area SnS thin film composed of nanoscale SnS platelets with a controlled orientation relative to the surface via a single-step process involving in situ sulfur depletion and phase structural transition of the sputter-deposited SnS 2 particles. The synthesized SnS films show good optoelectronic performances such as high signal-to-noise ratios, linear dynamic range, and high response speeds. In addition, the orientation of the SnS platelets is found to control the optoelectronic properties such as the electronic junction formation and the optical reflectance. The orientation-controlled SnS layers on Si substrate operate as a good photosensor with a good zero-bias photoresponse over a wide range of wavelengths including ultraviolet, visible, and near-infrared. The device performances evaluated from the transient photovoltage, photocurrent, Mott-Schottky characteristics, and impedance spectroscopy are all well correlated with the geometric orientation of the 2D SnS layers within the film.

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Optoelectronic properties of single-layer, double-layer, and bulk tin sulfide: A theoretical study

Cited by 139 publications

References 61 publications

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers

Growth of Large‐Area SnS Films with Oriented 2D SnS Layers for Energy‐Efficient Broadband Optoelectronics

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