Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic structure that is comprised of polar layers. In this article, we use first principles calculations to show the multistability of monolayer SnS and GeSe, two prototype materials where the direction of the puckering can be switched by application of tensile stress or electric field. Furthermore, the two inequivalent valleys in momentum space, which dictated by the puckering orientation, can be excited selectively using linearly polarized light, and this provides additional tool to identify the polarization direction. Our findings suggest that SnS and GeSe monolayers may have observable ferroelectricity and multistability, with potential applications in information storage. The discovery of 2D materials that can be isolated into single layers through exfoliation and exhibit novel properties has established new paradigms for ultrathin devices based on atomically sharp interfaces [1,2]. In particular, transition metal dichalcogenides (TMDs) have been studied extensively and have shown potential for many technological applications ranging from photovoltaics to valleytronic devices [3][4][5][6][7][8][9]. The family of monolayer 2D materials has recently grown to include other 2D semiconductors, such as phosphorene and related materials.However, one of the features thus far lacking for applications both in 2D electronics and in valleytronics is non-volatile memory. Ferromagnetism, an essential element in spintronic memories, is believed to be achievable in graphene and other 2D materials but so far remains difficult to realize and control [10]. Ferroelectric memories, in which the information is stored in the orientation of the electric dipole rather than in the magnetization are a possible option. Single-layer graphene (SLG) ferroelectric field-effect transistors (FFET) with symmetrical bit writing have been demonstrated [11], but the prototypes rely on bulk or thin film ferroelectric substrates [11] or ferroelectric polymers [12], rather than on crystalline atomically thin ferroelectric materials. An altogether different approach to information storage relies on phase change materials, where the bit value corresponds to a distinct structural phase of the material. Researchers have recently optimized the phase switching energy by using superlattice structures where the movement of the atoms is confined to only one dimension [13].In this article, we analyze the stability of group-IV monochalcogenide MX (M=Ge or Sn, and X=S or Se) monolayers, paying particular interest to their potential as memory functional materials. As prototypes, we use SnS and GeSe. In ambient conditions, bulk SnS and GeSe crystallize in the orthorhombic structure of the P nma space group. At 878 K, SnS goes through a secondorder displacive phase transition into the β-SnS phase with Cmcm symmetry [14,15], which is also a layered phase that can be viewed as a distorted rocksalt structure. For bulk GeSe, such a phase transition has not been observed. Ins...