Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

Passlack, M.; Medendorp, N.; Zollner, Stefan; Gregory, R.; Braddock, D. Christopher

doi:10.1063/1.1695445

Cited by 20 publications

(10 citation statements)

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“…18 The clear existence of three operational regimes -accumulation, depletion and inversion -of these MOS structures for both n-and p-type samples indicates that the Fermi level is unpinned. 6 Thicker oxides (48 nm and 110 nm) on both types of GaAs also show similar unpinned behavior (not shown). The frequency dispersion (offset between CQ and CH curves in accumulation) seen in Fig.…”

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confidence: 78%

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Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications

Cao

Zhang

et al. 2005

Applied Physics Letters

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Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below ~100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10 -9 A/cm 2 and J=8.7 x 10 -11 A/cm 2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to 1 support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications. 2Due to the wide array of high electron mobility alloys of varying bandgaps that can be epitaxially grown on its surface, GaAs remains the most widely used semiconductor for high-speed electronic applications. While Schottky gates are commonly used in high-speed GaAs transistors, the restricted forward bias (a few tenths of a volt) that can be applied without excessive gate leakage currents limits their power handling capability.The electrical characteristics of native oxides of GaAs are far inferior to those of SiO 2 on Si, and an alternative insulator has long been pursued 1,2 to enable the preferred metal-insulator-semiconductor gate structure. Many deposited insulator/GaAs structures have been investigated, although only a few have yielded promising results. 3-6 Native oxide films on GaAs can offer advantages of processing convenience and low cost.Wet thermal oxides of AlGaAs 7 have been studied but found to suffer from midgap traps caused by residual interfacial As. 8 These traps lead to increased interface recombination velocity 9,10 and high leakage currents. 11 However, the wet thermal oxides of As-free As shown in the bright-field TEM images of Fig. 2, dark particles exist near the oxide/GaAs interface in the 110 nm oxide of Fig. 2 (a), while no dark interfacial particles appear in the 17 nm oxide of Fig. 2 (b). Fig. 2 (b) is representative of the entire observable area for this and a second wedge-polished cross section specimen, with the absence of particles also confirmed for plan-view specimens (not shown) in which possible loss of particles due to ion milling and electron beam interactions is suppressed by the fact that they are protected from the vacuum by the substrate and overlying oxide film. The interfacial particles in Fig. 2 (a) are believed to be indium rich based on Z-contrast TEM images 16 (not shown) and Auger depth profiling. 17 The size of the particles increases with the progressive consumption of the InAlP epilayer during oxidation. 16 We hypothesize that In, the heaviest element in the structure, outdiffuses more slowly than the other alloy constituents and hence accumulates near the inter...

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confidence: 78%

“…Many deposited insulator/GaAs structures have been investigated, although only a few have yielded promising results. [3][4][5][6] Native oxide films on GaAs can offer advantages of processing convenience and low cost.…”

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confidence: 99%

Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications

Cao

Zhang

et al. 2005

Applied Physics Letters

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“…The optical constants of Gd x Ga 0.4Ϫx O 0.6 films were determined as a function of mole % x by spectroscopic ellipsometry. 9 The total oxide thickness t ox in this study ranges from 642 to 654 Å as measured by ellipsometry. High resolution cross sectional TEM has been used in a few selected cases to verify the oxide thickness; agreement with the ellipsometry data has been typically within 3%.…”

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confidence: 93%

Current conduction processes in high-κ Gd0.31Ga0.1O0.59/Ga2O3 gate dielectric stacks on GaAs

Chen

Passlack

Medendorp

et al. 2004

Applied Physics Letters

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Current conduction processes in high-κ (κ=20.2) Gd0.31Ga0.1O0.59/Ga2O3 dielectric stacks grown on n-type GaAs by molecular beam epitaxy have been investigated. Metal-oxide-semiconductor capacitors have been characterized by current density (j) versus electric field (E) measurements at temperatures ranging from 90 to 450 K. For temperatures T⩽200 K, the high field (4.5⩽E⩽6.2 MV/cm) current is temperature independent and a Fowler–Nordheim tunneling slope of 1.75 eV3/2 is obtained. Frenkel–Poole emission is found to dominate at temperatures of 300 K and above at moderate electric fields (1.3⩽E⩽2.2 MV/cm). For Frenkel–Poole emission, a barrier height of 1.1 eV and a dynamic dielectric constant of 7.95 is derived from ln(j/E) vs 1/T and ln(j/E) vs E1/2 plots, respectively.

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“…In recent years, many deposited insulator/GaAs structures have been investigated, with a few yielding promising results [9]- [13]. Native-oxide films on GaAs can offer advantages of processing convenience and low cost.…”

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confidence: 99%

Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric

Cao

Zhang

et al. 2006

IEEE Electron Device Lett.

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This paper reports the first demonstration of a microwave-frequency operation of a GaAs MOSFET fabricated using a wet thermal oxidization of InAlP lattice-matched to GaAs to form a native-oxide gate insulator. Devices with 1-µm gate lengths exhibit a cutoff frequency (f t ) of 13.7 GHz and a maximum frequency of oscillation (f max ) of 37.6 GHz, as well as a peak extrinsic transconductance of 73.6 mS/mm. A lowleakage current density of 3.8 × 10 −3 A/cm 2 at 1-V bias for an MOS capacitor demonstrates the good insulating properties of the ∼ 11-nm thick native gate oxide.

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Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

Abstract: Articles you may be interested inGdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

Cited by 20 publications

References 13 publications

Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications

Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications

Current conduction processes in high-κ Gd0.31Ga0.1O0.59/Ga2O3 gate dielectric stacks on GaAs

Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric

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