Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

Abstract

Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40 ∘ C on glass substrates. The grain size of 13.5 ± 3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM) images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100-330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200 ∘ C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150 ∘ C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

Environment-friendly copper-based chalcogenide thin film solar cells: status and perspectives

“…58–62 In addition, the hole mobility of binary-CuS can reach up to ∼25 cm 2 V −1 s −1 , which is ideal for transporting layers in solar cell applications. 63,64 These results confirm the benefits of using binary CuS/Se as inorganic selecting layers.…”

Investigation of Structure, Optical, and Electrical Properties of CuS Thin Films by CBD Technique

“…Deposition temperature has a reverse relationship with the activation energy, and it has been decreased from 0.009 eV to 0.003 eV for deposition temperatures of 80 • C and 90 • C, respectively. The activation energy was in the range mentioned in References [41,42]. The activation energy decreases with the increase of both concentrations of CuSO 4 and SC(NH 2 ) 2 as shown in Table 5, but activation energy increases with increasing tartaric acid concentration mentioned in Table 5.…”

“…Deposition temperature has a reverse relationship with the activation energy, and it has been decreased from 0.009 eV to 0.003 eV for deposition temperatures of 80 °C and 90 °C, respectively. The activation energy was in the range mentioned in References [41,42].…”

Vapor–Liquid–Solid Growth of One-Dimensional Tin Sulfide (SnS) Nanostructures with Promising Field Emission Behavior

“…Nanostructures of semiconductor chalcogenides have gained importance in recent years because of tailoring of the dielectric, electric, and optical properties via shape and size control and their potential applications in photonics, optoelectronic, vacuum micro/nanoelectronic devices. , Amongst the various chalcogenides, tin sulfide (SnS) is a IV–VI group direct narrow band gap semiconductor ( E g ∼ 1.30 eV, at 300 K). Furthermore, it exhibits both the p- and n-type conduction .…”