Optical and electrical properties of zinc oxide thin films with low resistivity via Li–N dual-acceptor doping

Zhang, Daoli; Zhang, Jianbing; Guo, Zhe; Miao, Xiangshui

doi:10.1016/j.jallcom.2011.03.028

Cited by 23 publications

(13 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the fabrication of p-type ZnO is difficult due to the low solubility of the acceptor dopant, deep acceptor level and self-compensation effect involving native defects such as oxygen vacancies (V o ) and zinc interstitials (Zn i ), etc. [2,9,10].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

Erdogan

Kara

Ozdamar

et al. 2011

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

“…It has been suggested that p-type doping in ZnO can be achieved through substituting either group I elements, such as Na [11], K [12] or Li [13] with Zn or group V elements, such as N [10], P [14], As [5] or Sb [3] for oxygen. Furthermore, Li-N [9] and Al-N [2] co-doped ZnO films have also been studied to produce p-type ZnO.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

Erdogan

Kara

Ozdamar

et al. 2011

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…This can be attributed to the fact that the length of Li Zn -O (0.197 nm) and Zn-N O (0.196 nm) bonds is slightly shorter than that of Zn-O (0.199 nm) bond [18,19]. This could make the lattice constant decrease and produce some strain in the films, the strain changes among atomic spacing of semiconductors will affect the energy gap [20]. However, the a-axis lattice constant is calculated to be 0.3381 nm for the ZnO: (Li, N) film annealed 35 min, which is somewhat larger than the value of 0.3249 nm of bulk ZnO [21].…”

Section: Resultsmentioning

confidence: 99%

Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method

Xie

Chen

2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Lithium and nitrogen dual-doped ZnO films [ZnO: (Li, N)] with Li concentrations of 4 at.% were grown on glass substrates by ion beam enhanced deposition (IBED) and then annealing in Ar flow. The influence of post-annealing time on their structural, optical and electrical properties was studied. The co-doped ZnO: (Li, N) films have a ZnO wurtzite structure. Electrical property studies indicated that the ZnO: (Li, N) film annealed at 500°C in Ar showed p-type conductivity with a lowest resistivity of 10.83 X cm. The transmittance of ZnO: (Li, N) film is above 80 % in visible range and the band gap of ZnO: (Li, N) film have a evident narrowing after p-type doping.

show abstract

“…53 suggests that these defects might relate to the incorporation of oxygen in the crystal lattice. We emphasize that the origin of defects in ZnO is generally under debate in the literature [52][53][54][55][56][57][58] and that a direct comparison with the literature needs to be done with caution, as the defect density is sensitively affected by the growth method and annealing conditions. In addition, the ame spray synthesis utilized in this work is a new and novel production method.…”

Section: 49mentioning

confidence: 99%

Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide

et al. 2015

View full text Add to dashboard Cite

In this work, we report on the electrical characterization of nanoparticular thin films of zinc oxide (ZnO) and aluminum-doped ZnO (AZO). Temperature-dependent current-voltage measurements revealed that charge transport for both, ZnO and AZO, is well described by the Poole-Frenkel model and excellent agreement between the experimental data and the theoretical predictions is demonstrated. For the first time it is shown that the nature of the charge-transport is not affected by the doping of the nanoparticles and it is proposed that the Poole-Frenkel effect is an intrinsic and universally limiting mechanism for the charge transport in nanoparticular thin films with defect states within the bandgap. and also thin-lm solar cells, where it can serve as an active 10,11 or interfacial 12,13 or electrode material.14 Moreover, ZnO is a promising material in the eld of transparent 3,4,15 and exible electronics, 15,16 because large-area solution processing on exible substrates using techniques like inkjet printing appears feasible.17,18 The solutions for lm deposition are either based on the sol-gel route or on nanoparticle synthesis. The latter has the advantage that the synthesis and the lm deposition can be separated from each other. As pointed out previously, 19,20 this allows cheap and highthroughput synthesis at elevated temperatures, while the lm deposition is achieved at lower temperatures, which is a prerequisite for the use of exible (oen polymer-based) substrates.The problem of nanoparticulate ZnO thin lms deposited at low temperatures is that they hardly reach the electric performance of zinc oxide lms based on sputtering 21 or spray pyrolysis.22 Therefore, a better understanding of the electric conduction in these lms is desired.So far, most of the charge transport studies on ZnO nanoparticle lms used the transistor device structure: Meulenkamp 23 and Roest et al. 24,25 studied ZnO nanoparticles with small sizes (z5 nm) permeated in electrolyte solutions and it was demonstrated that transport occurs via tunnelling between discrete electronic states with or without additional thermal activation depending on the characteristics of the electrolyte. 25Besides, space-charge limited conduction (SCLC) was shown for ZnO by Bubel et al. 19 and by Caglar et al. 26 (sandwich device geometry). In these two cases, 19,26 the sizes of the nanostructures were larger (above 25 nm) compared to the abovementioned reports. This might partially explain the different ndings.Discrepancies between various transport investigations were also revealed for other nanoparticular materials, e.g. for nanostructured lms of silicon. Besides hopping, 27,28 SCLC, 29 the Poole-Frenkel effect, 30,31 and tunnelling 32,33 were reported for nano-Si (porous silicon or nanoparticles). These inconsistent results further emphasize the need for a detailed description of charge transport in nanoparticular lms.In this work, the charge transport of nanoparticulate ZnO and AZO thin lms was investigated. A dispersion of ligandstabilized ZnO or...

show abstract

Optical and electrical properties of zinc oxide thin films with low resistivity via Li–N dual-acceptor doping

Cited by 23 publications

References 27 publications

Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method

Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide

Contact Info

Product

Resources

About