Optical and electrical properties of GaN/AlN superlattices grown on Si(1 1 1) substrate by pulsed laser deposition

The influence of the silicon substrate temperature on structural and optical properties of thin-film cadmium sulfide formed with femtosecond laser deposition

“…The details of the deposition chamber have been described previously [10]. The depositions were carried out in the stainless steel vacuum chamber evacuated by a turbomolecular pump to a base pressure of 10 À3 Pa. A femtosecond pulsed Ti:Sapphire laser (Spectra Physics, Spitfire 50 fs) was used for the experiments.…”

“…Compared to the other techniques, the PLD has many features such as that the laser ablation of a target can create a highly energetic growth precursor, leading to form nonequilibrium growth conditions, so that highquality films can be obtained at a fairly low substrate temperature. Furthermore, PLD can be performed in more flexibility than that of other conventional techniques, and it is feasible to control the thickness of films [10]. Up to now, the pulsed nanosecond laser deposition technique was currently used in laboratory research to obtain thin CdS films [11][12][13] technology was used to deposit nitride thin films and oxide thin films and so on [14][15][16].…”

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

“…Strained GaN/AlN superlattices can also be grown on Si substrates by PLD [174]. In this case, an AlN buffer layer was grown on the Si substrate first, followed by ten pairs of GaN/ AlN layers.…”

“…It is proven that both GaN and AlN show hexagonal wurtzite structures. The effect of strained layer thickness on properties of GaN/AlN superlattice layers is also studied [174]. It is found that thicker superlattice layers lead to higher carrier concentration and electron mobility.…”

“…As pointed out above, this is mainly due to two aspects, i.e., the high growth rate of PLD, and the difficulty of doping films by PLD. To tackle these problems, researchers have proposed novel approaches to grow higher quality GaN and InGaN films, which provide clues for the fabrication of highperformance LED devices with the application of PLD [174][175][176].…”