Optical and electrical studies on molybdenum sulphoselenide [Mo(S1−xSex)2] thin films prepared by arrested precipitation technique (APT)

Synthesis and characterization of new quaternary MoBiInSe5 mixed metal chalcogenide thin films

“…At alkaline P H in thin film formation on substrate surface. As Na2SeSO3 ionizes in aqueous alkaline solution to yield Se 2− and SO3 2− ions, reducing species SO3 2− ion existed in solution may reduce Mo 4+ to Mo 2+ due to the presence of excess sulphite ions [13]. At P H 9.5 ionic product K exceed the solubility product Ksp which results in condensation of metal ions and chalcogen ions into quasi-binary thin film formation MoSe, Bi2Se3, In2Se3 to MoBiInSe5.…”

“…The APT process involves two stages formation of stable complexes of precursor metals and slow dissociation of the metal complex at a particular P H and temperature value. Ion by ion condensation on substrate support facilitates the thin film growth due to uniform condensation of metal ions and chalcogen ions on the active surface of substrate [11][12][13]. The precursors play an important role in improving performance of quaternary thin films [14][15][16].…”

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

“…The annealed films show the formation of poorly crystalline 2H-MoS 2 with a preferred orientation along c-axis and about 80% transmission in the visible range. Ajalkar et al [142] deposited amorphous MoS 2 thin films and studied structural, optical and electrical properties.…”

“…Ajalkar et al [142] and Hankare et al [186] synthesized n-type MoSe 2 thin films. The as-grown films were found to be transparent, uniform, well adherent, and brown in color.…”

Synthesis of fibrous reticulate nanocrystalline n-type MoBi2(Se1−xTex)5 thin films: Thermocooling applications

“…Bi 2 Te 3 , Bi 2 Se 3 , MoTe 2 , MoSe 2 and their solid solution crystals are narrow band gap semiconductors with asymmetric band structure, having rhombohedral unit cell. Optical band gap energies for these materials varies from 0.15 to 1.4 eV (Bi 2 Te 3 ), 0.14 to 2.35 eV (Bi 2 Se 3 ), 0.6 to 1.0 eV (MoTe 2 ) and 1.12 to 1.52 eV (MoSe 2 ) [2][3][4][5].…”