Optical and Electrical Study of Defects in GaN 
In Situ Doped with Eu3+ Ion Grown by OMVPE

Wang, Jingzhou; Koizumi, Akira; Fujiwara, Yoshihiro; Jadwisienczak, Wojciech M.

doi:10.1007/s11664-016-4983-6

Cited by 4 publications

(1 citation statement)

References 40 publications

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“…It is widely accepted that RE ions induce isovalent or isoelectronic cluster traps [19,[90][91][92][93][94][95]. There are some features that we can take into account for this, such as that the ionic radius of Tb 3+ (0.923 Å) is bigger than that of In 3+ (0.81 Å), which we assume it is substituting, and that Pauling's electronegativity of Tb 3+ (1.2) is smaller than that of In 3+ (1.78) [96,97].…”

Section: Isovalent Trap Modelmentioning

confidence: 99%

Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host’s optical and electrical properties

Llontop¹,

Fernandez²,

Piñeiro³

et al. 2022

J. Phys. D: Appl. Phys.

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The effect of terbium doping on the electrical, optical and light emission properties of sputtered indium tin oxide thin films was investigated. The films were prepared by radio frequency dual magnetron sputtering, maintaining a high optical transmittance in the ultraviolet and visible spectral regions, and a low electrical resistivity ranging from 5×10−3 Ω·cm to 0.3 Ω·cm. Terbium-related luminescence is achieved after annealing at 470 ◦C in air at atmospheric pressure. Electrical resistivity and optical transmittance were measured after each annealing step to evaluate the compromise between the achieved light emission intensity, electrical and optical properties. Additionally, temperature dependence of Tb-related luminescence quenching was assessed by temperature-dependent photoluminescence measurements, from 83 K to 533 K, under non-resonant excitation. Thermal quenching activation energies suggest an effective energy transfer mechanism from the ITO host to the rare-earth ions. This indirect excitation mechanism was modeled using a spherical potential-well and a tight-binding one-band approximation approaches, describing a short-range charge trapping process and subsequent formation of bound excitons to rare-earth ion clusters.

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Section: Isovalent Trap Modelmentioning

confidence: 99%

Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host’s optical and electrical properties

Llontop¹,

Fernandez²,

Piñeiro³

et al. 2022

J. Phys. D: Appl. Phys.

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Characterization and photoelectrochemical properties of CICS thin films grown via an electrodeposition route

Chihi

Bessaı̈s

2017

RSC Adv.

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Deep Levels in GaN

Narita

Tokuda

2020

Characterization of Defects and Deep Levels for GaN Power Devices

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Deep levels in GaN are summarized. E1 and E3 electron traps at the respective energies of around EC − 0.25 eV and EC − 0.6 eV have been commonly observed in n-type GaN layers. H1 hole trap at around EV + 0.9 eV is reported in both n-type and p-type GaN layers, and likely associates the yellow luminescence band in a photoluminescence spectrum. The concentration of Ha hole trap at around EV + 0.3 eV in p-type GaN layers is detected with a nearly equal concentration of H1 hole trap. Based on the comparison with the first-principles calculations using hybrid functionals and the photoluminescence studies, the origins of E3, H1 and Ha traps are most likely attributed to 0/- charged state of iron on Ga site (FeGa), 0/− and +/0 charged states of carbon on nitrogen site (CN), respectively. Among deep levels induced by irradiation, EE1 and EE2 at around EC − 0.12 eV and EC − 1 eV correspond to the calculated energy levels of the nitrogen vacancy (VN) and the interstitial (NI). Finally, deep levels compensating carriers in n-type and p-type GaN layers are extracted.

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Optical and Electrical Study of Defects in GaN In Situ Doped with Eu3+ Ion Grown by OMVPE

Cited by 4 publications

References 40 publications

Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host’s optical and electrical properties

Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host’s optical and electrical properties

Characterization and photoelectrochemical properties of CICS thin films grown via an electrodeposition route

Deep Levels in GaN

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