Optical and field emission performances of bamboo shoot-shaped GaN nanowires

Cui, Zhen; Li, Meiqin; Li, Enling; Ma, Deming; Zhao, Binyue

doi:10.1016/j.spmi.2018.05.050

Cited by 5 publications

(4 citation statements)

References 38 publications

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“…E on for the pristine GaN nanofilms is found to be 0.95 V μm −1 whereas E on for H-and O-plasma treated GaN nanofilms are 0.52 and 1.79 V μm −1 , respectively. Therefore, the sample with H-plasma treatments shows the best FE characteristics with the lowest E on which is close to or even lower than those reported on GaN nanostructures with different morphologies [24][25][26]. However, the O-plasma treatment leads to a significant increase in E on and thus an evident deterioration of FE performance.…”

Section: Resultssupporting

confidence: 60%

Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment

Wang¹,

Guo²,

Yang³

et al. 2021

Surf. Topogr.: Metrol. Prop.

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The (002) oriented GaN nanostructured films prepared by pulsed laser deposition (PLD) on n-type Si (100) substrates were treated by H- and O-plasma, finding both treatments do not make the sizable changes in crystalline structure and morphology of GaN nanofilms. However, the field emission (FE) performance of GaN nanofilms is considerably improved by H-plasma treatment (H-GaN) but deteriorated by O-plasma treatment (O-GaN). The turn-on fields, Eon, for H- and O-plasma treated GaN nanofilms are determined to be 0.52 and 1.79 V μm−1, respectively, in contrast with that of pristine GaN nanofilms, 0.95 V μm−1. The improvement of FE performance by the H-plasma treatments could be attributed to the reasons of the reduced surface potential barrier, the increased electron concentration, the increased surface conductivity, and the increased effective emission area. The first-principles calculations represents that the experimental and theoretical work function results have the same trend with the descending sequence of O-plasma treated GaN > pristine GaN > the H-plasma treated GaN.

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Section: Resultssupporting

confidence: 60%

Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment

Wang¹,

Guo²,

Yang³

et al. 2021

Surf. Topogr.: Metrol. Prop.

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“…The GaN truncated nanocone structure proposed by Yeong Jae Kim obtained a photocurrent density three times higher than that of the plane GaN in the experiment, and the optimal geometrical parameters of the truncated nanocone structure are given 19 . Cui Zhen found that the main luminescence peak of bamboo‐like GaN nanowire prepared by chemical vapor deposition method is 3.41 eV 20 . Therefore, it is clear that the simulation research on GaN nanostructures is mainly related to the improvement of their light trapping ability, or the preparation of GaN nanostructures to investigate their photoelectric performance through experiments.…”

Section: Introdutionmentioning

confidence: 95%

“…19 Cui Zhen found that the main luminescence peak of bamboo-like GaN nanowire prepared by chemical vapor deposition method is 3.41 eV. 20 Therefore, it is clear that the simulation research on GaN nanostructures is mainly related to the improvement of their light trapping ability, or the preparation of GaN nanostructures to investigate their photoelectric performance through experiments. However, theoretical research on the QE of nanostructured GaN photocathode is relatively lacking.…”

Section: Introdutionmentioning

confidence: 99%

Theoretical study on2Dphotoelectric emission ofGaNnanorod array and nanocone array photocathode

Zhang

Liu

et al. 2020

Int J Energy Res

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Summary In order to improve the photoemission performance of gallium nitride (GaN) ultraviolet vacuum photoelectric devices and to obtain GaN photocathode with high quantum efficiency in this paper. The photoelectric emission theoretical models of GaN nanorod array and GaN nanocone array are constructed, and the models are simulated by COMSOL Multiphysics and MATLAB software. By changing the structure of the photocathode emission layer, the low photoemission performance of the conventional reflection‐mode thin‐film photocathode can be improved. After calculating and analyzing the influence of the geometric parameters of the nanorod array on its quantum efficiency (QE), it is found that the nanorod array has the best diameter and spacing to maximize its QE, and the nanocone array can also achieve high QE under some conditions. In addition, the high QE GaN nanorod array and nanocone array structures obtained in this article can provide some references for the production and manufacture of high‐performance GaN photocathode.

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“…Zhen C et al have synthesized GaN nanopencils and nanotowers and singlecrystalline bamboo shoot-shaped GaN nanowires and a layer-structure GaN nanowires by a chemical vapor deposition (CVD) method. In the work of Yeong Jae Kim et al they concluded that the saturation of photocurrent in the truncated nanocones was increased by about 3 times compared to planar GaN [6][7][8][9][10]. Li Zeping et al have found that GaN truncated nanocones have high absorption and photoelectrochemical efficiency compared with planar counterpart [11].…”

Section: Introductionmentioning

confidence: 99%

The effect of geometry parameters on light harvesting performance of GaN nanostructure arrays—a numerical investigation and simulation

Zhangyang

Liu

et al. 2019

Mater. Res. Express

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In this paper, COMSOL Multiphysics Commercial Package software is used to simulate the models of two kinds of GaN nanostructure arrays, and to study how the geometric structure and periodicity of arrays affect the optical properties of GaN nanostructures. By analyzing the schematic diagram of electric field distribution and absorption curves of GaN nanostructure arrays, we concluded that the absorptivity is a decreasing function of periodicity in non-homogenous shaped nanostructures. In addition, a gentle change in geometric structure or having a lower effective refraction index on the incident side of the light are more conducive to enhancing the light absorption ability of GaN nanostructure arrays. Simulation experiments on GaN nanostructures will provide some references for the structural design of photocathodes, which will help UV detectors to achieve efficient light absorption.Nomenclature

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Optical and field emission performances of bamboo shoot-shaped GaN nanowires

Cited by 5 publications

References 38 publications

Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment

Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment

Theoretical study on2Dphotoelectric emission ofGaNnanorod array and nanocone array photocathode

The effect of geometry parameters on light harvesting performance of GaN nanostructure arrays—a numerical investigation and simulation

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