Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition

Feng, Zhe Chuan

doi:10.1007/978-3-662-09877-6_6

Cited by 10 publications

(23 citation statements)

References 107 publications

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“…The lattice constant of 3C-SiC at RT is 4.359 Å and is smaller than that of Si (5.430 Å at RT). The thermal expansion coefficient of 3C-SiC is slightly larger than that of Si [10]. Consequently, as an epitaxial 3C-SiC film is grown on a Si substrate by CVD, we have a tensile biaxial stress inside the SiC film.…”

Section: Discussionmentioning

confidence: 98%

“…Consequently, as an epitaxial 3C-SiC film is grown on a Si substrate by CVD, we have a tensile biaxial stress inside the SiC film. Our Raman scattering studies [10,20] have shown that this tensile biaxial stress shifts the optical phonons of 3C-SiC to lower energies. According to the theoretical analyses in [20], it also splits the k = 0 (C point) degenerate valence band, puts the heavy-hole band on top and narrows the energy band gap.…”

Section: Discussionmentioning

confidence: 98%

“…According to the theoretical analyses in [20], it also splits the k = 0 (C point) degenerate valence band, puts the heavy-hole band on top and narrows the energy band gap. The band gap change, DE g , due to a tensile biaxial stress, X, can be calculated by a formula [10,20],…”

Section: Discussionmentioning

confidence: 99%

“…The author has recently published a book chapter [10] to review, and introduced important research and development (R&D) on 3C-SiC materials growth and analyses since 1983. However, beyond those references till 2003, cited in [10], many attractive and interesting results on 3C-SiC R&D are reported in 2004-2005 [4,5,7,11-19] and more are coming.…”

Section: Introductionmentioning

confidence: 99%

“…By way of chemical vapor deposition (CVD), the successful growth of 3C-SiC films on Si wafers has been achieved in 1983 [8] by overcoming the difficulties from the large lattice difference of about 20% and an 8% mismatch in the thermal expansion coefficients between 3C-SiC and Si [9]. The author has recently published a book chapter [10] to review, and introduced important research and development (R&D) on 3C-SiC materials growth and analyses since 1983. However, beyond those references till 2003, cited in [10], many attractive and interesting results on 3C-SiC R&D are reported in 2004-2005 [4,5,7,11-19] and more are coming.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

Feng¹

2006

Microelectronic Engineering

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Section: Discussionmentioning

confidence: 98%

Section: Discussionmentioning

confidence: 98%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

Feng¹

2006

Microelectronic Engineering

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Nonlinear Optical Properties and Ultrafast Dynamics of Undoped and Doped Bulk SiC

Ding¹,

Wang²,

Zhou³

et al. 2010

Chinese Phys. Lett.

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Ultrafast third-order nonlinear optical response of bulk 6H-SiC undoped and doped with different nitrogen concentrations are investigated utilizing femtosecond Z-scan and optical Kerr effect (OKE) techniques at the wavelength of 800 nm. The Z-scan measurement shows that the third-order nonlinear optical susceptibilities of the doped samples are improved in comparison to the intrinsic sample. The OKE results additionally reveal that the instantaneous nonlinear optical response of the samples can be ascribed to the distortion of the electron cloud. The ultrafast transient spectroscopic measurements with the one-color and two-color pump-probe techniques demonstrate that the ultrafast recovery process in subpicosecond domain is induced by two-photon absorption process, while the slow relaxation component reflects the carrier dynamics of the excited electrons.

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Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (1 0 0) epilayers

Talwar

Feng

et al. 2012

Semicond. Sci. Technol.

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We have reported room temperature infrared reflectance and transmission measurements at near normal incidence in the frequency range of 200-6500 cm −1 to characterize 3C-SiC epitaxial layers grown on (1 0 0) Si by CVD in a vertical reactor configuration by using different Si/C ratios and growth time ranging from 2 min to 4 h. The effects of surface roughness and 'conducting interfacial' transition layer are meticulously included in the effective medium theory for simulating the infrared spectra to explicate observed damping of interference fringe contrasts with increasing frequencies. In a few epitaxially grown samples we have adopted Bruggeman's two-component model to elucidate atypical divots seen within the reststrahlen band by assuming the coexistence of crystalline and intergranular grains forming heterogeneous 3C-SiC. The estimated values of surface roughness and conducting transition layer are correlated very well with the existing data from optical interference and scanning probe microscopy.

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Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition

Cited by 10 publications

References 107 publications

Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

Nonlinear Optical Properties and Ultrafast Dynamics of Undoped and Doped Bulk SiC

Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (1 0 0) epilayers

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