Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

Feng, Zhe Chuan

doi:10.1016/j.mee.2005.10.044

Cited by 15 publications

(4 citation statements)

References 24 publications

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“… The figure shows the bonding energy of Si‐C in SD‐SiC as a broad peak at 840 cm −1 with no shoulder evident at 950 cm −1 . In a more recent work, a deep flat band between 770 and 920 cm −1 was reported as characteristic for 3C‐SiC formed on Si substrate by chemical vapor deposition …”

Section: Resultsmentioning

confidence: 88%

Microscopic and Spectroscopic Characterization of Stacking‐Sequence Disordered SiC

et al. 2014

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Nanometric silicon carbide (SiC) powder (~5 nm) with a stacking-sequence disordered structure (SD-SiC), synthesized from elemental powders of Si and C, was investigated by microscopic and several spectroscopic methods. The structure of SD-SiC was characterized by transmission electron microscopy (TEM), 13 C, and 29 Si-NMR, and by infrared (IR), Raman, and X-ray photoelectron spectroscopy (XPS) methods. TEM characterizations showed relatively large deviations of the lattice parameters in the as-synthesized SiC, indicative of the presence of stacking-sequence disorder. IR analysis showed a weaker Si-C bond in the SD-SiC than in the 3C-SiC. XPS determinations showed that C and Si in SD-SiC are similar to those in 3C-SiC. Broader peaks of 29 Si and 13 C MAS-NMR also indicate that the structure of SD-SiC is different from that of 3C-SiC. Raman spectroscopy exhibited activities for the crystalline polytypes and the amorphous of SiC but lack of them for the SD-SiC. The inactivity of Raman spectroscopy for the SD-SiC along with large deviation of the lattice constant and the extremely broad X-ray diffraction peaks would indicate that SD-SiC is a possible intermediate state between conventional polytype SiC and amorphous SiC, that is, a possible new type of SiC.

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Section: Resultsmentioning

confidence: 88%

Microscopic and Spectroscopic Characterization of Stacking‐Sequence Disordered SiC

et al. 2014

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“…These properties are often associated with the effect of the spatial limitation of electrons within nanocrystallites of the system. Different approaches have therefore been proposed in the literature to modify the crystalline structure of the layers, and composite materials with nanocrystallites have been produced using various techniques and a choice of different processing conditions [24][25][26][27][28][29]. A decrease in the crystallite size by using electrochemical methods or choosing the corresponding technological growth conditions allows one to observe the photoluminescence with an increased emission efficiency in 3C-SiC films in the UV spectral region [8], including the photoluminescence associated with the manifestation of the quantum confinement effect in the electronic spectrum of nanocrystalline structures [14].…”

Section: Light-emitting Propertiesmentioning

confidence: 99%

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

Orlov

Vdovin

Ivina³

et al. 2020

Crystals

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Different growth stages and surface morphology of the epitaxial 3C-SiC/Si(100) structures were studied. Heterocompositions were grown in vacuum from hydric compounds at a lower temperature. The composition, surface morphology and crystal structure of the 3C-SiC films were tested using X-ray diffraction, second ion mass spectrometry, scanning ion and electron microscopy, photo- and cathode luminescence. It was demonstrated that the fine crystal structure of the 3C-SiC islands was formed by the close-packed nanometer-size grains and precipitated on the underlying solid carbonized Si layer. Luminescence spectral lines of the solid carbonized Si layer, separated island and solid textured 3C-SiC layer were shifted toward the high ultraviolet range. The spectra measured by different methods were compared and the nature of the revealed lines was considered. This article discusses a quantum confinement effect observation in the 3C-SiC nanostructures and a perspective for the use of nanotextured island 3C-SiC layers as a two-dimensional surface quantum superlattice for high-frequency applications. The conductivity anisotropy and current-voltage characteristics of the two-dimensional superlattices with a non-additive electron dispersion law in the presence of a strong electric field were studied theoretically. Main efforts were focused on a search of the mechanisms allowing realization of the high-frequency negative dynamical conductivity for the structures having a positive static differential conductivity.

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“…Therefore, using Si substrates for deposition of 3C-SiC epilayers minimizes the cost of the wafers significantly compared with the homoepitaxial films grown on 4H-SiC or 6H-SiC substrates. Moreover, the devices fabricated based on 3C-SiC on Si substrate have the potential of being integrated to the welldeveloped Si-based devices [15,16].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of strained nano-thin 3C–SiC/Si heterostructures

Rahimi¹,

Miller²,

Raghavan³

et al. 2009

J. Phys. D: Appl. Phys.

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The effects of strain on the conduction mechanism in heterostructures consisting of strained nano-thin 3C–SiC films on Si are reported. These films exhibit significantly different electrical behaviours than the bulk material. Strained nano-thin 3C–SiC films were grown on n-type Si substrates by gas source molecular beam epitaxy. Reflection high-energy electron diffraction patterns show that these films are about 3% strained relative to the SiC lattice constant. In order to investigate the electrical properties of thin film structures, Al, Cr and Pt contacts to a nano-thin film 3C–SiC were deposited and characterized. The I–V measurements of the strained nano-thin films demonstrate back-to-back Schottky diode characteristics and the band offsets due to the biaxial tensile strain introduced within the 3C–SiC films were calculated and simulated. Based on the experimental and simulation results, an empirical model for the current transport in the heterostructures based on strained nano-thin films has been proposed. It was found that due to the band alignment of this structure, current is constrained at the surface which allows use of nano-thin films as surface sensors.

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Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

Cited by 15 publications

References 24 publications

Microscopic and Spectroscopic Characterization of Stacking‐Sequence Disordered SiC

Microscopic and Spectroscopic Characterization of Stacking‐Sequence Disordered SiC

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

Electrical properties of strained nano-thin 3C–SiC/Si heterostructures

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