Optical and interfacial electronic properties of diamond-like carbon films

Woollam, John A.; Natarajan, V.; Lamb, Joel D.; Khan, Aurangzeb; Bu-Abbud, George H.; Mathine, D.; Rubin, Dan; Dillon, R. O.; Banks, Bruce A.; Pouch, John J.; Gulino, Daniel A.; Domitz, S.; Liu, David C.; Ingram, David C.

doi:10.1016/0040-6090(84)90164-0

Thin Solid Films

1984

DOI: 10.1016/0040-6090(84)90164-0

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Optical and interfacial electronic properties of diamond-like carbon films

John A. Woollam¹,

V. Natarajan²,

Joel D. Lamb³

et al.

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1986

1990

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Cited by 17 publications

(1 citation statement)

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“…The experiment described here was developed considering discrepancies in past research (6) and the availability of ion implantation equipment (used in the experiment) to industry (7). Research conducted in the mid-1960s (8,9) has indicated that certain dopants could be ionimplanted into diamond, but the relative amounts of radiation damage and the apparently small amount of boron that was electrically active redirected most diamond research efforts toward other, more promising techniques (10,11). However, the results of recent experimental research indicate the implantation and electrical activation of typical III-IV dopants in diamond is possible (12,13).…”

mentioning

confidence: 99%

Characterization of the Ion Implantation and Thermal Annealing of Boron in <100> Diamond

Baginski

Davidson

1990

J. Electrochem. Soc.

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mentioning

confidence: 99%

Characterization of the Ion Implantation and Thermal Annealing of Boron in <100> Diamond

Baginski

Davidson

1990

J. Electrochem. Soc.

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ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

Mizokawa

Komoda

Miyasato

et al. 1987

Electron Comm Jpn Pt II

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Diamond‐like carbon (DLC) films were deposited on silicon wafers by hydrogen gas reactive dc‐sputtering of graphite and fabricated MIS diodes. ESCA chemical depth profiles showed that almost no impurities such as oxygen and nitrogen were present in the bulk of DLC films. In the interfacial region between DLC and Si substrate, a small amount of Si‐C bonding as well as natural oxide of silicon were detected. It is found that the 1st‐derivative spectrum of C‐KLL Auger line in ESCA from the DLC film surface was very similar to the C‐KLL AES spectrum from natural diamond. This suggests that DLC film has a fairly diamond‐like tetrahedral sp3 C‐C bonding configuration. The C‐V curves of the Hg/DLC/Si MIS diodes showed accumulation, depletion and inversion characteristics. The charge trapped in DLC film and the interface state density distribution as a function of the surface potential were obtained first. Both the amount of trapped charge and the C‐V hysteresis were considerably smaller compared to an Si3N4/Si diode. The interface state density curve exhibits a “U” shape and the minimum density was less than 3 × 1010/cm2/eV in the vicinity of the mid‐band gap.

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Passivating coatings for intercalated graphite fiber electrical conductors

Rashid

Lake

Woollam

et al. 1986

Carbon

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Optical and interfacial electronic properties of diamond-like carbon films

Cited by 17 publications

References 9 publications

Characterization of the Ion Implantation and Thermal Annealing of Boron in <100> Diamond

Characterization of the Ion Implantation and Thermal Annealing of Boron in <100> Diamond

ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

Passivating coatings for intercalated graphite fiber electrical conductors

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