1996
DOI: 10.1364/ao.35.005067
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Optical and mechanical characterization of evaporated SiO_2 layers Long-term evolution

Abstract: Numerous characterizations were performed on 120-nm thick evaporated SiO(2) layers in order to understand how their features change as a function of deposition conditions and time. Density decreases with increasing deposition pressure. It governs all the layer properties (refractive index, hardness, and stress). In situ stress measurements show that stress can be divided into intrinsic and water-induced components, respectively linked to local density (outside the pores) and porosity. Intrinsic stress increase… Show more

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Cited by 34 publications
(17 citation statements)
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“…At higher Xe flow rates, the stretching peak continues to shift to higher wavenumbers for more than one month. This can be explained by a stress relaxation with time, as proposed for pure silica films 21 . A shift to lower wavenumbers, which is an indication of fluorine loss, never occurs for films deposited with high Xe flow rates.…”
Section: 21mentioning
confidence: 75%
“…At higher Xe flow rates, the stretching peak continues to shift to higher wavenumbers for more than one month. This can be explained by a stress relaxation with time, as proposed for pure silica films 21 . A shift to lower wavenumbers, which is an indication of fluorine loss, never occurs for films deposited with high Xe flow rates.…”
Section: 21mentioning
confidence: 75%
“…56 Indeed, our spectra are in good agreement with other silica spectra found elsewhere. 55,57 Moreover, it is well known in the literature that metal-oxide-based materials produce IR bands between 400-1000 cm À1 due to the interatomic vibrations. 58,59 Thus, the IR signals at 465 and 415 cm À1 are assigned to NiO and MgO, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…SiO 2 Type A is deposited along with oxygen gas, whereas SiO 2 Type B deposition does not involve the introduction of an additional gas. This difference in processing has been shown to effectively generate different levels of residual stress within the SiO 2 layers because gas scattering during deposition increases porosity [12]. SiO 2 Type C was deposited under the same conditions as SiO 2 Type B but received a surface CONTACT J. Alexis joel.alexis@enit.fr pretreatment before deposition consisting of an ionic pre-cleaning by argon ion bombarding [11,[13][14][15].…”
Section: The Multilayer System Under Studymentioning
confidence: 99%