2004
DOI: 10.1063/1.1644927
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Optical and mechanical properties of MgO crystals implanted with lithium ions

Abstract: Defect profile induced by implantation of Li+ ions with an energy of 175 keV and a fluence of 1×1017 ions/cm2 in MgO single crystals was characterized by Rutherford backscattering and optical absorption measurements. Several absorption bands at 5.0, 3.49, 2.16, and 1.27 eV, identical to those found in neutron irradiated crystals, were observed and have been previously associated with oxygen vacancies and higher-order point defects involving oxygen vacancies. Despite the high fluence of Li+ ions, no evidence wa… Show more

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Cited by 7 publications
(2 citation statements)
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“…Metallic nanoparticles embedded in various dielectric materials have generated considerable interest in the fields of opto-electronics and nonlinear optics due to their strong coupling to incident electromagnetic fields [1][2][3][4][5][6][7][8][9][10][11]. The optical response of these substrates is dominated by the localized surface plasmon resonance (LSPR), which leads to an electric field enhancement that can be used to boost molecular optical responses such as surface-enhanced Raman scattering (SERS) [12].…”
Section: Introductionmentioning
confidence: 99%
“…Metallic nanoparticles embedded in various dielectric materials have generated considerable interest in the fields of opto-electronics and nonlinear optics due to their strong coupling to incident electromagnetic fields [1][2][3][4][5][6][7][8][9][10][11]. The optical response of these substrates is dominated by the localized surface plasmon resonance (LSPR), which leads to an electric field enhancement that can be used to boost molecular optical responses such as surface-enhanced Raman scattering (SERS) [12].…”
Section: Introductionmentioning
confidence: 99%
“…The Pt bottom electrodes had the same 200 nm-thick. The thickness and Young's modulus of the used substrates were 500 mm and 160 GPa [20] for Si, and 1 mm and 280 GPa [21] for MgO(1 0 0). Therefore, the effective piezoelectric constant of the current (1 0 0)-oriented NN-BT thin films might be lowered due to the clumping effect, which is caused by the physical characteristics of the substrate.…”
Section: Resultsmentioning
confidence: 99%