2011
DOI: 10.1016/j.jcrysgro.2010.11.054
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Growth and properties of highly oriented lead-free Mn-doped NaNbO3–BaTiO3 piezoelectric thin films prepared by chemical solution deposition

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Cited by 8 publications
(7 citation statements)
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“…It should be noted that there is an optimal Mn content of 1 mol% for Mn‐doped NNCZ thin films with the lowest leakage current density of ~3.0 × 10 −7 A/cm 2 at 40 kV/cm, which is 10 3 ~10 4 times lower than that of its counterpart without Mn doping. The high leakage current of NNO‐based thin films is mainly ascribed to the formation of oxygen vacancies due to the volatility of sodium . It is also noted that the true current carriers are not oxygen vacancies but the free holes in NNO‐based thin films due to the filling of oxygen vacancies, that is, V O ¨+1/2O 2 →O O × +2 h ˙, V O ¨ is the vacancy at the oxide ion site, O O x is O 2− at the oxide ion site and h ˙ is the hole.…”
Section: Resultsmentioning
confidence: 99%
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“…It should be noted that there is an optimal Mn content of 1 mol% for Mn‐doped NNCZ thin films with the lowest leakage current density of ~3.0 × 10 −7 A/cm 2 at 40 kV/cm, which is 10 3 ~10 4 times lower than that of its counterpart without Mn doping. The high leakage current of NNO‐based thin films is mainly ascribed to the formation of oxygen vacancies due to the volatility of sodium . It is also noted that the true current carriers are not oxygen vacancies but the free holes in NNO‐based thin films due to the filling of oxygen vacancies, that is, V O ¨+1/2O 2 →O O × +2 h ˙, V O ¨ is the vacancy at the oxide ion site, O O x is O 2− at the oxide ion site and h ˙ is the hole.…”
Section: Resultsmentioning
confidence: 99%
“…In this work, the energy storage properties of Mn‐modified NaNbO 3 −0.04CaZrO 3 (NNCZ) thin films are studied. Mn was deliberately added into the system to effectively lower the leakage current, and thus improve the electrical performance through its increased valence state (eg, Mn 2+ → Mn 3+ → Mn 4+ ) leading to the absorption of free carrier‐holes originating from the volatilization of K and Na ions …”
Section: Introductionmentioning
confidence: 99%
“…However, the antiferroelectric phase is prevalent at room temperature. 12−16 To realize the stable existence of the ferroelectric phase in NN-based ceramics, researchers introduced LiTaO 3 , 17 BaTiO 3 , 12,18,19 and (K 0.5 Bi 0.5 )TiO 3 20,21 as the second component to obtain NN-based piezoelectric ceramics with a stable ferroelectric phase. Zeng et al found that the antiferroelectric phase of NN-based ceramics was transformed to ferroelectric orthorhombic (O) phase after the addition of a small amount of BT.…”
Section: Introductionmentioning
confidence: 99%
“…found that the antiferroelectric phase of NN-based ceramics was transformed to ferroelectric orthorhombic (O) phase after the addition of a small amount of BT. With further increase of BT content, the orthorhombic–tetragonal (O–T) coexistence phase can be obtained with the d 33 value reaching ∼175 pC/N. ,, Wang et al added BaSnO 3 to NN-BT-based ceramics to improve the tolerance factor of NN-based piezoelectric ceramics and successfully achieved higher piezoelectric performance (354 pC/N). , Chen et al reported the use of BT and BaFe 0.5 Nb 0.5 O 3 with large tolerance factors to tune NN-based ceramics to ferroelectric T phase to obtain high piezoelectric activity (367 pC/N) . Based on the morphotropic phase boundary (MPB) construction experience of PZT, Qi et al successfully constructed R–T coexistence phases in NN-10BT-based ceramics using tripartite inducers.…”
Section: Introductionmentioning
confidence: 99%
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