Reduced leakage current and enhanced ferroelectric properties in Mn-doped Bi0.5Na0.5TiO3-based thin films

Effect of Fe doping on the crystallization and electrical properties of Na0.5Bi0.5TiO3 thin film

“…2. At 500 kV/cm, the P r of the NBTFe 0.02 thin film is 20 μC/cm 2 , which can be comparable to that of (Na 0.5 Bi 0.5 ) 1 À x Ba x TiO 3 (P r ¼ 21.5 μC/cm 2 ), Pr 3 þ -doped 0.15K 0.5 Bi 0.5 TiO 3 -0.85Na 0.5 Bi 0.5 TiO 3 (P r ¼ 23 μC/cm 2 ) and Mndoped NBT-based thin films (P r ¼ 23 μC/cm 2 ) [19,20,3].…”

“…It has a relatively large remnant polarization (P r ) of 38 μC/cm 2 and high Curie temperature (T c ) of 320 1C for bulk ceramic [2]. But until now, for NBT thin film, its intrinsic performance is difficult to be measured due to the high leakage current, which is strongly dependent on oxygen vacancies [ðV O 2 À Þ ] produced by the volatilization of A-site elements [3,4].…”

Reduced leakage current and large polarization of Na0.5Bi0.5Ti0.98Mn0.02O3 thin film annealed at low temperature

“…With 2 at. % Mn doping, the leakage current density for Bi 0.5 (Na 0.76 K 0.2 Li 0.04 ) 0.5 TiO 3 thin film annealed at 800 °C is reduced by more than two orders of magnitude [7]. For (Na 0.85 K 0.15 ) 0.5 Bi 0.5 TiO 3 thin film fabricated at 700 °C, as Mn doping content increasing in the range of 0~6 at.…”

“…It has a high Curie temperature of 320 °C, and depoles at 200 °C due to the phase transition from ferroelectric to antiferroelectric [5,6]. However, for NBT thin film, its intrinsic performance is difficult to be measured because of low resistivity [7]. A variety of methods have been taken to overcome this drawback [8][9][10][11][12][13][14][15].…”

Crystal structure and ferroelectric properties of Bi_0.5Na_0.5TiO₃-modified Bi_0.5+0.5<i>_x</i>Na_0.5−0.5<i>_x</i>Ti₁₋<i>_x</i>Mn_0.75<i>_x</i>Mo_0.25<i>_x</i>O<

“…7) On the other hand, the temperature dependence of dielectric constant in the BNTBaNb 2 O 6 ceramics revealed that the solid solution underwent two phase transitions from ferroelectric to anti-ferroelectric and antiferroelectric to paraelectric. 8) Both the transition temperatures of depolarization temperature (T d ) and Currie temperature (T m ) were shifted to lower temperature with the increasing content of BaNb 2 O 6 , resulting enhancing the piezoelectric properties. The additions of oxide have also been found to be effective in improving the electrical properties of BNT-based ceramics.…”