Optical and Scintillation Properties of Pure ZnS Crystal

Yanagida, Takayuki; Fujimoto, Yutaka; Yanagida, Satoko

doi:10.7566/jpscp.1.014031

Cited by 4 publications

(3 citation statements)

References 18 publications

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“…Zn 2+ cation with relatively small covalent radii shows positive roles to increase the E g and to maintain the d ij of a compound, simutaneously . On the other hand, Zn 2+ -containing chalcogenides usually exhibit interesting fluorescence properties. − Therefore, we think it is interesting to introduce a ZnS 4 tetrahedral building unit into a 3D network of main group metal tetrahedra in the hope of discovering new compounds with desired NLO properties and interesting fluorescence properties. Herein, a novel chalcogenide, Ba 6 Zn 7 Ga 2 S 16 , with excellent NLO performance is discovered.…”

Section: Introductionmentioning

confidence: 99%

Ba₆Zn₇Ga₂S₁₆: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties

Liu

2017

Chem. Mater.

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High-performance infrared (IR) nonlinear optical (NLO) materials with large laser damage thresholds (LDTs) are urgently needed because the current commercially available AgGaS2, AgGaSe2, and ZnGeP2 suffer their very low LDTs which shorten significantly their service lifetimes. Here, a novel sulfide, Ba6Zn7Ga2S16 with a very wide band gap of 3.5 eV, has been discovered. This compound crystallizes in the chiral trigonal R3 space group with a novel 3D framework that is constructed by ZnS4 tetrahedra, Zn3GaS10 supertetrahedra (a T2-type), and Zn3GaS10 quadri-tetrahedral clusters via vertex-sharing. Such a novel structure exhibits desirable features which suggest a promising NLO material: phase-matchability (PM), good NLO efficiency (about half that of benchmark AgGaS2), and the highest LDT among PM chalcogenides (28 times that of benchmark AgGaS2). In addition, the density functional theory (DFT) calculations confirm its PM behavior and reveal that the second harmonic generation (SHG) origin is mainly ascribed to the transition process from S-3p to Ga-4p, Zn-3p, Zn-3d, and Ba-5d states; the calculated d 11 coefficient of 6.1 pm/V agrees well with experimental values.

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Section: Introductionmentioning

confidence: 99%

Ba₆Zn₇Ga₂S₁₆: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties

Liu

2017

Chem. Mater.

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“…In most reported work which the sources from photoluminescence are attributed to self-activated centers and these centers, in turn, to crystal lattice vacancies such as sulfide vacancies [16]. The dashed curve represents the first emission peak was detected at 367 nm which originated from the interstitial Zn, while the decay time was 5.6 ns which consider quite fast such as in [17]. The dot curve represents the second emission peak which appeared at 439 nm, the origin was ascribed to defects zinc vacancy (V Zn ).…”

Section: Optical Measurementsmentioning

confidence: 96%

OLED Hybrid Light Emitting Devices with ZnS QDs, TPBi and Alq3 Electron Transport Layers

Mohammed

Saleh

Ibrahim

2018

NHC

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Semiconductor quantum dots (QDs) have attracted tremendous attentions for their unique characteristics for solid-state lighting and thin-film display applications. A simple chemical method was used to synthesis quantum dots (QDs) of zinc sulfide (ZnS) with low cost. The XRD) shows cubic phase of the prepared ZnS with an average particles size of (3-29) nm. In UV-Vis. spectra observed a large blue shift over 38 nm. The band gaps energy (Eg) was 3.8 eV and 3.37eV from the absorption and photoluminescence (PL) respectively which larger than the Eg for bulk. QDs-LED hybrid devices were fabricated using ITO/ PEDOT: PSS/ Poly-TPD/ ZnS-QDs/ with different electron transport layers and cathode of LiF/Al layers. The EL spectrum reveals a broad emission band covering the range 350 - 700 nm. Current-voltage (I–V) characteristics indicate that the output current is good according to the few voltages (8, 10, 11 and 12 V) used which gives acceptable results to light generation. Using TPBi and Alq3 as electron transport layer gives good enhancement to light generation in compares with that of QDs only. The emissions causing the luminescence were identified depending on the chromaticity coordinates (CIE 1931).

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“…The most popular mechanism is the so-called type I seesaw mechanism [1][2][3][4]. In the mechanism, right-handed (rh) neutrinos with heavy Majorana masses are introduced to the SM, and the tiny neutrino masses can be explained by a suppression of their heavy mass.…”

Section: Introductionmentioning

confidence: 99%

Atomki anomaly and dark matter in a radiative seesaw model with gauged B−L symmetry

Seto

Shimomura

2017

Phys. Rev. D

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Motivated by recently reported anomalies in a decay of an excited state of beryllium by the Atomki Collaboration, we study a radiative seesaw model with gauged B − L symmetry and a Z 2 parity. Assuming that the anomalies originate from the decay of the B − L gauge boson followed by the nuclear decay, the mass of the lightest right-handed neutrino or the dark matter candidate can be determined below 10 GeV. We show that for this mass range, the model can explain the anomalies in the beryllium decay and the relic dark matter abundance consistent with neutrino masses. We also predict its spin-independent cross section in direct detection experiments for this mass range.

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Optical and Scintillation Properties of Pure ZnS Crystal

Cited by 4 publications

References 18 publications

Ba₆Zn₇Ga₂S₁₆: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties

Ba₆Zn₇Ga₂S₁₆: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties

OLED Hybrid Light Emitting Devices with ZnS QDs, TPBi and Alq3 Electron Transport Layers

Atomki anomaly and dark matter in a radiative seesaw model with gauged B−L symmetry

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Optical and Scintillation Properties of Pure ZnS Crystal

Cited by 4 publications

References 18 publications

Ba6Zn7Ga2S16: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties

Ba6Zn7Ga2S16: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties

OLED Hybrid Light Emitting Devices with ZnS QDs, TPBi and Alq3 Electron Transport Layers

Atomki anomaly and dark matter in a radiative seesaw model with gauged B−L symmetry

Contact Info

Product

Resources

About

Ba₆Zn₇Ga₂S₁₆: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties

Ba₆Zn₇Ga₂S₁₆: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties