Optical and structural differences between RF and DC AlxNy magnetron sputtered films

Dumitru, V.; Morosanu, C.; Sandu, V.; Stoica, A. D.

doi:10.1016/s0040-6090(99)00726-9

Cited by 21 publications

(12 citation statements)

References 5 publications

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“…Cho has attributed the increase in band gap to consistently improved crystallinity and stoichiometry of the films. However, Dumitru et al [20] and Drüsedau and Koppenhagen [21] have observed different optical properties of AlN films deposited by DC and RF magnetron sputtering under identical operating conditions. A probable explanation for the decrease in band gap as observed in our work could be as follows.…”

Section: Spectroscopic Ellipsometry Resultsmentioning

confidence: 99%

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

Choudhary

Mishra

Biswas

et al. 2013

ISRN Materials Science

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Aluminum nitride thin films were deposited on Si (100) substrate by pulsed DC (asymmetric bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon and nitrogen. The deposited film was characterized by grazing incidence X-ray diffraction (GIXRD), atomic force microscope (AFM), spectroscopic ellipsometry, and secondary ion mass spectroscopy (SIMS). GIXRD results have shown (100) reflection of wurtzite AlN, whereas AFM micrographs have revealed very fine grained microstructure with average roughness in the range 6-8 nm. Spectroscopic ellipsometry measurements have indicated the band gap and refractive index of the film in the range 5.0-5.48 eV and 1.58-1.84, respectively. SIMS measurement has indicated the presence of oxygen in the film.

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Section: Spectroscopic Ellipsometry Resultsmentioning

confidence: 99%

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

Choudhary

Mishra

Biswas

et al. 2013

ISRN Materials Science

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“…A common example for sputtered films is aluminum nitride films. These films were prepared by both DC-and RF-sputtering technique, and their structure and optical properties were compared [26,27].…”

Section: Sputtering Techniquementioning

confidence: 99%

Advance Deposition Techniques for Thin Film and Coating

Jilani¹,

Abdel-wahab²,

HosnyHammad³

2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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Thin films have a great impact on the modern era of technology. Thin films are considered as backbone for advanced applications in the various fields such as optical devices, environmental applications, telecommunications devices, energy storage devices, and so on . The crucial issue for all applications of thin films depends on their morphology and the stability. The morphology of the thin films strongly hinges on deposition techniques. Thin films can be deposited by the physical and chemical routes. In this chapter, we discuss some advance techniques and principles of thin-film depositions. The vacuum thermal evaporation technique, electron beam evaporation, pulsed-layer deposition, direct current/radio frequency magnetron sputtering, and chemical route deposition systems will be discussed in detail.

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“…17,18,53 For the case of rf sputtering, increasing the N 2 /Ar ratio typically results in an increasing c-axis out-of-plane orientation, as determined by XRD h-2h scans. 12,15,22,47 In contrast, dc sputtering, which yields a smaller ion bombardment energy during deposition, results in the opposite trend 20,21,54 : Increasing the partial pressure of N 2 causes a decrease in the dominance of the XRD AlN 0002 peak, whereas other orientations become observable. Thus, during dc sputtering with a high N 2 partial pressure (or pure N 2 ), the out-of-plane orientation cannot be determined from XRD h-2h scans, as multiple peaks exhibit comparable intensities.…”

Section: A Out-of-plane Orientationmentioning

confidence: 99%

“…Thus, during dc sputtering with a high N 2 partial pressure (or pure N 2 ), the out-of-plane orientation cannot be determined from XRD h-2h scans, as multiple peaks exhibit comparable intensities. 20,54 Deniz et al, 18 have addressed this problem of hard-to-determine preferred orientation with pole figure measurements and found an abrupt transition from a 0002 AlN texture for N 2 /Ar < 13%, to a texture where the c-axis is tilted by $40 for N 2 /Ar > 13%, for dc reactive sputtered AlN with a deposition angle a ¼ 42 . They attributed this effect to a reduction in the surface diffusion of adsorbed molecules at high N 2 concentration, which causes a c-axis tilt toward the deposition flux.…”

Section: A Out-of-plane Orientationmentioning

confidence: 99%

Biaxial texture development in aluminum nitride layers during off-axis sputter deposition

Deng¹,

Muralt²,

Gall³

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Polycrystalline aluminum nitride (AlN) layers were deposited by pulsed-dc reactive magnetron sputtering from a variable deposition angle a ¼ 0-84 in 5 mTorr pure N 2 at room temperature. Xray diffraction pole figure analyses show that layers deposited from a normal angle (a ¼ 0) exhibit fiber texture, with a random in-plane grain orientation and the c-axis tilted by 42 6 2 off the substrate normal, yielding wurtzite AlN grains with the f10 12g plane approximately parallel (62) to the substrate surface. However, as a is increased to 45 , two preferred in-plane grain orientations emerge, with populations I and II having the c-axis tilted toward and away from the deposition flux, by 53 6 2 and 47 6 1 off the substrate normal, respectively. Increasing a further to 65 and 84 , results in the development of a single population II with a 43 6 1 tilt. This developing biaxial texture is attributed to a competitive growth mode under conditions where the adatom mobility is sufficient to cause intergrain mass transport, but insufficient for the thermodynamically favored low energy {0001} planes to align parallel to the layer surface. Consequently, AlN nuclei are initially randomly oriented and form a kinetically determined crystal habit exposing {0001} and f11 20g facets. The expected direction of its highest growth rate is 49 6 5 tilted relative to the c-axis, in good agreement with the 42-53 measured tilt. The in-plane preferred orientation for a > 0 is well explained by the orientation dependence in the cross section of the asymmetric pyramidal nuclei to capture directional deposition flux. The observed tilt is ideal for shear mode electromechanical coupling, which is maximized at 48. V

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Optical and structural differences between RF and DC AlxNy magnetron sputtered films

Cited by 21 publications

References 5 publications

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

Advance Deposition Techniques for Thin Film and Coating

Biaxial texture development in aluminum nitride layers during off-axis sputter deposition

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