Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors

Smiri, Badreddine; Arbia, Marwa Ben; Demir, İlkay; Saidi, F.; Othmen, Zied; Dkhil, Brahim; Altuntaş, İsmail; Elagöz, S.; Hassen, F.; Maâref, H.

doi:10.1016/j.mseb.2020.114769

Cited by 23 publications

(14 citation statements)

References 34 publications

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“…As mentioned in excitation power-dependent PL, localized states caused by potential fluctuations or carrier transfer in the band-tail may exist. The inhomogeneity of indium composition can result in fluctuation of energy band, thus, an atypical S-shaped behavior of peak energy with temperature will be presented [12]. Unlike the localized states induced Sshaped behavior highlighted in Ref.…”

Section: The Optical Propertymentioning

confidence: 83%

“…This may be caused by increasing temperature at the measured point, so sample A is probably sensitive to temperature variation. On the other side, the low-energy shoulder in sample B increases from 0.478 eV to 0.486 eV when the excitation power increases from 33 mW to 258 mW, and the slight shift of the shoulder peak is also exhibited in In-rich InxGa1−xAs samples, which is mainly due to defect-related energy band filling effect [12]. In addition, the intensity tends to saturate at high excitation power, which is normally a signature of the localization phenomena for potential fluctuations or carrier transfer in the band-tail [28].…”

Section: The Optical Propertymentioning

confidence: 95%

“…Single band edge peak is observed in sample A, while an additional low-energy shoulder peak appears in sample B. Such asymmetry may be attributed to localized trap states related to structural defects [12]. For the sake of comparison, PL spectra of sample B are deconvoluted using multiple Gaussian curves, and Figure 5b presents excitation power dependence of band edge peak and shoulder peak.…”

Section: The Optical Propertymentioning

confidence: 99%

“…For example, In 0.53 Ga 0.47 As, which is lattice-matched to InP materials, has been widely used in multi-junction photovoltaics and commercially available in opto-communications [3][4][5][6]. In recent years, extended wavelength In x Ga 1−x As (x > 0.53) and derived quaternary alloy have attracted more and more attention in thermophotovoltaics (TPV), remote sensing, and thermal imaging [7][8][9][10][11][12]. The lattice mismatch to InP substrate can be up to 3.2% (x = 1), and misfit dislocation will be generated to relax strains in the active epilayer during growth, which will deteriorate the device performances [13].…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Xu²,

Wei

et al. 2021

Crystals

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The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch.

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Section: The Optical Propertymentioning

confidence: 83%

Section: The Optical Propertymentioning

confidence: 95%

Section: The Optical Propertymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Xu²,

Wei

et al. 2021

Crystals

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“…Kızılötesi detektörler, askeri ve sivil amaçlar için termal görüntüleme, yön belirleme ve iletişim sistemlerinde yaygın olarak kullanılmaktadır [1][2][3][4][5][6][7][8][9][10]. Kızılötesi dedektörler algılama şekline bağlı olarak, kuantum kuyu içeren ve içermeyenler olarak ikiye ayrılabilir.…”

Section: Introductionunclassified

Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi

Turkoglu

Ergün

2021

International Journal of Innovative Engineering Applications

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Original scientific paperIn this study, we have investigated the temperature dependence of Current-Voltage measurements of GaAs /AlGaAs multi-quantum well. Our sample, which consists of inclined layers between the 10 periods GaAs /Al 0.25 Ga 0.75 As quantum wells and n + − GaAs contact layers in the central region, was grown by the Metal Organic Vapor Phase Epitaxy technique. We have found that tunneling current is effective at low temperatures (<85 K) and high voltages as well as thermal current at high temperatures (> 125 K) and low voltages. In addition, in the intermediate temperature region (65 K

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Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties

González-Morales,

Villa-Martínez,

Cruz-Bueno

et al. 2023

J Mater Sci

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In$$_x$$ x Ga$$_{1-x}$$ 1 - x As$$_y$$ y Sb$$_{1-y}$$ 1 - y epilayers with a fixed In content of $$\textit{x}$$ x = 0.145 were grown on GaSb(100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the quaternary epilayers and substrates was analyzed for different As contents ($$\textit{y}$$ y ) by X-ray $$\omega$$ ω -2$$\theta$$ θ . Epilayers with As content between $$\textit{y}$$ y = 0.120 and $$\textit{y}$$ y = 0.124 exhibited a positive lattice mismatch, leading to compressive strain. These samples showed a high crystalline quality and flat surfaces, as confirmed by high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). Quaternary alloys with As content between $$\textit{y}$$ y = 0.133 and $$\textit{y}$$ y = 0.141 displayed a negative lattice mismatch, resulting in tensile strain. Structural defects in these samples were evidenced by HR-XRD and on AFM micrographs. Raman measurements also revealed that lateral strain has a direct impact on the intensities of the LO-like, phonon–plasmon and disorder-activated longitudinal acoustic modes. For all In$$_x$$ x Ga$$_{1-x}$$ 1 - x As$$_y$$ y Sb$$_{1-y}$$ 1 - y films, photoluminescence (PL) spectra showed a bound exciton (BE) transition, with additional features observed in samples under tensile strain, indicating the involvement of native defect centers and donor–acceptor pairs. This study provides new insights into the effect of lateral strain on the crystalline and surface quality, and optical properties of quaternary alloys, relevant for novel optoelectronic applications.

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Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors

Cited by 23 publications

References 34 publications

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi

Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties

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