2006
DOI: 10.1063/1.2360923
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Optical and structural properties of polycrystalline 3C-SiC films

Abstract: Effect of annealing on the spectral and nonlinear optical characteristics of thin films of nano-ZnO J. Appl. Phys.Structural and optical investigation of plasma deposited silicon carbon alloys: Insights on Si-C bond configuration using spectroscopic ellipsometry

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Cited by 16 publications
(10 citation statements)
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“…19 Another two peaks are observed at 1351 cm À1 and 1592 cm À1 , which are similar to the results reported in Ref. 20. The peak at 1351 cm À1 is related to the TO mode of diamond which is the indication of the sp 3 C in SiC.…”
supporting
confidence: 87%
“…19 Another two peaks are observed at 1351 cm À1 and 1592 cm À1 , which are similar to the results reported in Ref. 20. The peak at 1351 cm À1 is related to the TO mode of diamond which is the indication of the sp 3 C in SiC.…”
supporting
confidence: 87%
“…Unlike RBS/C, the Raman probe depth decreases with increasing damage level in SiC. The penetration depth of 325‐nm line laser in amorphous SiC was reported to be less than 50 nm . Therefore, the Raman yields from SiC irradiated to the high fluences (≥6 × 10 14 cm −2 ) are mainly from the near surface region, due to the formation of a buried highly disordered or amorphized layer.…”
Section: Data Analysis and Results Discussionmentioning
confidence: 99%
“…The penetration depth of 325-nm line laser in amorphous SiC was reported to be less than 50 nm. [29] Therefore, the Raman yields from SiC irradiated to the high fluences (≥6 × 10 14 cm −2 ) are mainly from the near surface region, due to the formation of a buried highly disordered or amorphized layer. The D Raman , which is reversely proportional to the Raman yields from the residual SiC that is damaged but not fully amorphized, reflects the level of lattice disorder present in the irradiated SiC.…”
Section: Data Analysis and Results Discussionmentioning
confidence: 99%
“…The PL intensity increases with the implantation temperature which indicates that the crystallinity of the SiC nanoparticles improves with the implantation temperatures. 19 the Figure 3(b) it is clearly seen that the substrate temperature has no role in the PL band gap and the size of the SiC nanoparticles; however it increases the crystallinity of the nanoparticles.…”
Section: Resultsmentioning
confidence: 92%