The enhanced polarization relaxation and excellent high-temperature dielectric properties of N-doped SiC

Abstract

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“…6c. Based on the Debye theory [32,33], the increase of ε could be attributed to the relaxation polarization enhanced by more dangling bonds and vacancies defects [34,35], and the ε is usually associated with the electrical conductivity as well as the relaxation loss.…”

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“…It is widely considered that silicon carbide (SiC) is a good candidate for design of MA materials with high thermostability, high strength, as well as high oxidation and corrosion resistance [37,38]. However, the application of SiC in MA area is greatly limited on account of its low electrical conductivity [39]. In short, a high-temperature MA material should need not only high stability under extreme condition, but also appropriate electrical conductivity.…”

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