Optical and structural properties of lead iodide thin films prepared by vacuum evaporation method

Ghosh, Tapas; Bandyopadhyay, Sivaji; Roy, Krittish; Kar, Satyajit; Lahiri, A.; Maiti, A. K.; Goswami, K.

doi:10.1002/crat.200811160

Cited by 38 publications

(15 citation statements)

References 15 publications

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“…The error is calculated from statistical error bands derived from the fit. This approximate value of the bandgap encloses literature values of PbI 2 films obtained by different deposition methods [17,30]. As a comparison, Fig.…”

Section: Accepted Manuscript 33 Optical Characterizasupporting

confidence: 85%

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Tuning morphological features of lead iodide by low pressure vapor phase deposition

Koffman-Frischknecht

Soldera

et al. 2018

Thin Solid Films

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Lead iodide (PbI 2) is a semiconductor with extensive use as an active layer for X-ray detectors and as a precursor for perovskite solar cells. Here we present a low vacuum method to obtain very uniform PbI 2 films with full substrate coverage. This method consists in the sublimation of PbI 2 inside a hot zone and its transport by an Ar flow to a substrate held at a controlled temperature. Using scanning electron microscopy combined with focused ion beam and X-ray diffraction we studied the morphology and crystallographic structure of the PbI 2 films with different deposition parameters: substrate and source evaporation temperature, deposition time and substrate material. At high substrate temperature (80ºC) and low evaporation temperature (310ºC) onto a glass sample, we obtained dense and smooth PbI 2 films showing hexagonal crystals, or platelets, stacked parallel to the substrate. The choice of the substrate material has a significant impact on the film morphology yielding porous-like structures with voids within the films for some substrates. A bandgap E g = 2.42 eV and Urbach energy

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Section: Accepted Manuscript 33 Optical Characterizasupporting

confidence: 85%

“…A C C E P T E D M A N U S C R I P T 4 detectors [28], or on its use as substrate for optoelectronic characterization [17,29,30].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Tuning morphological features of lead iodide by low pressure vapor phase deposition

Koffman-Frischknecht

Soldera

et al. 2018

Thin Solid Films

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“…The average crystallite size of the as-deposited ZnO film at 27 °C is worked out from the XRD pattern following Scherrer method [14]. The crystallite size (D) is given by the Scherrer equation, D = 0.9 λ/β cosθ, where λ (1.54056 Å) is the wavelength of X-ray radiation used, β is the full width at half-maximum (FWHM) and 2θ is the diffraction angle.…”

Section: Resultsmentioning

confidence: 99%

Optical studies on ZnO films prepared by sol‐gel method

Ghosh¹,

Bandopadhyay

Roy

et al. 2009

Cryst. Res. Technol.

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A standard sol-gel method was used to deposit ZnO thin films of suitable thickness on glass substrate.The optical characteristics of the visible to infrared range on thermal stress were critically observed. Morphological signature of the films was detected by X-ray diffraction (XRD) and the crystallite size determined by Scherrer method from XRD data were consistent with grain size estimated from spectroscopic data through Meulenkamp equation. The optical band gap value from the transmission spectrum was found to corroborate with the existing works.

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“…By use of Scherrer formula 24 and Lorentz fitting procedure the average size of cristobalite-like grains was determined to be (40 ± 10) nm, in both cases. Figure 1 shows cristobalite-like layer formed on SiC after oxidation in ambient air at 1673 K. Oxide layer appears to be fully dense with average thickness of 1-2 µm.…”

Section: Resultsmentioning

confidence: 99%

Short-Circuit Oxygen Diffusion in Thermally Grown Silica Layer

Gligorijević¹,

Schmidt

Radović

et al. 2010

Int. J. Mod. Phys. B

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Amorphous polymer-derived Si-C-N ceramics can be doped with different elements (Al, B etc.) through various pre-ceramic polymer routes. Thus, controlling of the high temperature oxidation resistance can be achieved on an atomic level. An important factor for silica layer growth is oxygen diffusion in protective thermally grown layers. In order to get insight of the oxygen diffusion mechanism, analysis should include both, bulk and short-circuit diffusion. XRD measurements of Int. J. Mod. Phys. B 2010.24:682-694. Downloaded from www.worldscientific.com by AUSTRALIAN NATIONAL UNIVERSITY on 03/15/15. For personal use only. Short-Circuit Oxygen Diffusion in Thermally Grown Silica Layer 683oxidized Si-C-N and SiC revealed the possibility that oxide layers were fully crystallized and are composed of nano-sized cristobalite-like grains. Secondary ion mass spectrometry depth profile analysis after 18 O2-16 O2 isotope exchange experiments on oxidized SiC indicated that short-circuit diffusion is probably grain boundary diffusion of molecular oxygen.

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Optical and structural properties of lead iodide thin films prepared by vacuum evaporation method

Cited by 38 publications

References 15 publications

Tuning morphological features of lead iodide by low pressure vapor phase deposition

Tuning morphological features of lead iodide by low pressure vapor phase deposition

Optical studies on ZnO films prepared by sol‐gel method

Short-Circuit Oxygen Diffusion in Thermally Grown Silica Layer

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