Optical and Transport Properties of p-Type GaAs

Sharmin, Mahfuza; Choudhury, Subhashree; Akhtar, Nasrin; Begum, Tahmina

doi:10.3329/jbas.v36i1.10926

Cited by 17 publications

(7 citation statements)

References 7 publications

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“…Absorption co-efficient ( ) and optical band gap of p-type Si was obtained from the measurements of optical transmittance and reflectance with a UV-vis-NIR spectrometer of photon wavelength range 300 -2500 nm. Similar works have been reported 11,12 on gallium arsenide (GaAs). The aim of present work was to observe the nature of electrical conductivity of ptype Si below room temperature, photoconductive response, the nature of optical absorption, inter-band transition and estimating optical band gap energy.…”

Section: Introductionsupporting

confidence: 75%

Electrical Optical and Structural Properties of p-type Silicon

Sharmin

Choudhury

Begum

2015

Dhaka Univ. J. Sci.

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Electrical, optical and structural properties of p-type single crystal silicon were investigated in this work. Electrical conductivity of p-type silicon was measured in the temperature ranges 190 -300 K. The acceptor ionization energy ( E A ) was between 0.047 -0.051 eV. Photoconductivity of the material was investigated by varying sample current, light intensity and temperature at a constant chopping frequency of 45.60 Hz. Absorption co-efficient ( ) of the material was calculated from optical transmittance and reflectance measurements at room temperature (300 K) in the wavelength range of 300 -2500 nm. The direct optical band gap energy was found between 2.10 -2.20 eV and the indirect optical band gap energy was found between 0.95 -1.0 eV. The lattice parameter (a) was found to be 5.419Å from X-ray diffraction method (XRD).

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Section: Introductionsupporting

confidence: 75%

Electrical Optical and Structural Properties of p-type Silicon

Sharmin

Choudhury

Begum

2015

Dhaka Univ. J. Sci.

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“…Optical and transport properties of p-and n-type GaAs were investigated (Chowdhury et al 2012, Sharmin et al 2012.…”

Section: Introductionmentioning

confidence: 99%

Effect of thickness on the optical properties of Gaas thin films

Das

Begum

et al. 2013

J Bangladesh Acad Sci

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Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10 -4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm.Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 -2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased.

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“…EDX spectra of the films were also studied to confirm the presence of Mg in the Doped ZnO films. Optical and structural characteristics of some other compound semiconductors such as ZnSe 18 , CdTe 19 , GaAs 20,21 , etc. were also studied by the authors previously.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Characterization of Magnesium Doped Zinc Oxide Thin Films Deposited by Spray Pyrolysis

Biswas

Sharmin

Das

et al. 2016

Dhaka Univ. J. Sci.

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Pure and magnesium (Mg) doped zinc oxide (ZnO) thin films were prepared onto clean glass substrate by spray pyrolysis (SP) technique at the substrate temperature of 300°C. Various optical parameters such as absorption co-efficient, band gap energy, refractive index, extinction coefficient of the thin films were studied using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300-2500 nm. Optical band gap increased from 3.24 to 3.46 eV with the increase of Mg concentration from 0 to 40%. Transmittance and refractive index of the Mg doped ZnO thin films decreased due to the increase of Mg concentration. The EDX spectra confirmed the increase of Mg and consequent reduction in Zn content in the Mg doped ZnO thin films. Pure and Mg- doped ZnO films were annealed at 425°C for 1 hour. X-ray diffraction (XRD) study of the annealed films showed hexagonal type of polycry-stalline structure with the preferred orientation along (101) plane with some other peaks (100), (002), (102), (110), (103) and (112). From the XRD patterns it was found that grain size decreased from 63.45 to 36.56 nm, lattice constant _ and c remained almost constant with Mg doping concentration.Dhaka Univ. J. Sci. 64(1): 1-6, 2016 (January)

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Optical and Transport Properties of p-Type GaAs

Cited by 17 publications

References 7 publications

Electrical Optical and Structural Properties of p-type Silicon

Electrical Optical and Structural Properties of p-type Silicon

Effect of thickness on the optical properties of Gaas thin films

Structural and Optical Characterization of Magnesium Doped Zinc Oxide Thin Films Deposited by Spray Pyrolysis

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